Thermal stability for Te-based devices

Zhao, Chunsong; Hurtado, Luis; Javey, Ali

doi:10.1063/5.0018045

Cited by 18 publications

(13 citation statements)

References 24 publications

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“…[ 15,16 ] Post‐annealing treatments were previously performed on the evaporated Te films in order to further improve crystallinity, decrease the density of grain boundaries, and control crystal orientation, but the relatively high vapor pressure of tellurium leads to re‐evaporating of films during post‐annealing, creating a rough surface and pinholes in films, thus poor electrical properties. [ 17–20 ]…”

Section: Introductionmentioning

confidence: 99%

Tellurium Single‐Crystal Arrays by Low‐Temperature Evaporation and Crystallization

et al. 2021

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Thermally evaporated tellurium possesses an intriguing crystallization behavior, where an amorphous to crystalline phase transition happens at near‐ambient temperature. However, a comprehensive understanding and delicate control of the crystallization process for the evaporated Te films is lacking. Here, the kinetics and dynamics of the crystallization of thermally evaporated Te films is visualized and modeled. Low‐temperature processing of highly crystalline tellurium films with large grain size and preferred out‐of‐plane orientation ((100) plane parallel to the surface) is demonstrated by controlling the crystallization process. Tellurium single crystals with a lateral dimension of up to 6 µm are realized on various substrates including glass and plastic. Field‐effect transistors based on 5 °C crystallized Te single grains (6‐nm‐thick) exhibit an average effective hole mobility of ≈100 cm2 V−1 s−1, and on/off current ratio of ≈3 × 104.

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Section: Introductionmentioning

confidence: 99%

Tellurium Single‐Crystal Arrays by Low‐Temperature Evaporation and Crystallization

et al. 2021

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“…Meanwhile, it would be technologically important to further develop our ALD technique for realizing Te thin films in an atomically thin limit. In this regard, we note that higher deposition temperature is not a preferred option under the current processing conditions because of the intrinsically high vapor pressure of Te , and resultant thermal desorption (Figure S9). In Stage #2, the surface reaction primarily occurs on the as-deposited Te films, and it is a steady-state film growth mode, reducing the GPC of ∼0.48 Å, perhaps ascribed to having fewer adsorption sites than in Stage #1.…”

Section: Resultsmentioning

confidence: 99%

“…Also, the potentials of Te can allow a wide range of applications in (opto-)electronics, ,− spintronics, thermoelectrics, and selector devices with its outstanding p-type transport behavior, robust chirality, enhanced thermoelectric figure of merit, and fast switching performance, respectively. For the practical integration of such superior properties into the nanoscale regime, a tailored growth technique that principally yields its thin-film form must be developed to address the inherent quasi-1D character and high vapor pressure of Te , leading to the flake or locally anisotropic growth at elevated temperatures. , In this sense, a low-temperature process is an essential prerequisite for preventing its thermal diffusion and desorption while highly scalable and reliable production is still desired. Thus far, physical vapor deposition techniques including thermal evaporation, , sputtering, , and pulsed laser deposition have been exclusively employed for Te deposition.…”

mentioning

confidence: 99%

Atomic Layer Deposition Route to Scalable, Electronic-Grade van der Waals Te Thin Films

et al. 2023

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Scalable production and integration techniques for van der Waals (vdW) layered materials are vital for their implementation in next-generation nanoelectronics. Among available approaches, perhaps the most well-received is atomic layer deposition (ALD) due to its self-limiting layer-by-layer growth mode. However, ALD-grown vdW materials generally require high processing temperatures and/or additional postdeposition annealing steps for crystallization. Also, the collection of ALD-producible vdW materials is rather limited by the lack of a material-specific tailored process design. Here, we report the annealing-free wafer-scale growth of monoelemental vdW tellurium (Te) thin films using a rationally designed ALD process at temperatures as low as 50 °C. They exhibit exceptional homogeneity/crystallinity, precise layer controllability, and 100% step coverage, all of which are enabled by introducing a dual-function co-reactant and adopting a so-called repeating dosing technique. Electronically, vdW-coupled and mixed-dimensional vertical p-n heterojunctions with MoS 2 and n-Si, respectively, are demonstrated with well-defined current rectification as well as spatial uniformity. Additionally, we showcase an ALD-Te-based threshold switching selector with fast switching time (∼40 ns), selectivity (∼10 4 ), and low V th (∼1.3 V). This synthetic strategy allows the low-thermal-budget production of vdW semiconducting materials in a scalable fashion, thereby providing a promising approach for monolithic integration into arbitrary 3D device architectures.

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“…This property is very favorable for electronics and optoelectronics. [ 14,90–92 ] Like the aforementioned TMDs, the bandgaps of Te are thickness‐dependent. [ 93 ] For bulk to monolayer Te, the bandgap value varies from 0.31 to 1.04 eV.…”

Section: Categories Of Layered 2d Materials Used For Infrared Photode...mentioning

confidence: 99%

Infrared Photodetectors Based on 2D Materials and Nanophotonics

Zha

Luo

et al. 2021

Adv Funct Materials

131

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2D materials, such as graphene, transition metal dichalcogenides, black phosphorus, and tellurium, have been demonstrated to be promising building blocks for the fabrication of next-generation high-performance infrared (IR) photodetectors with diverse device architectures and impressive device performance. Integrating IR photodetectors with nanophotonic structures, such as surface plasmon structures, optical waveguides, and optical cavities, has proven to be a promising strategy to maximize the light absorption of 2D absorbers, thus enhancing the detector performance. In this review, the state-of-the-art progress of IR photodetectors is comprehensively summarized based on 2D materials and nanophotonic structures. First, the advantages of using 2D materials for IR photodetectors are discussed. Following that, 2D material-based IR detectors are classified based on their composition, and their detection mechanisms, key figures-of-merit, and the principle of absorption enhancement are discussed using nanophotonic approaches. Then, recent advances in 2D material-based IR photodetectors are reviewed, categorized by device architecture, i.e., photoconductors, van der Waals heterojunctions, and hybrid systems consisting of 2D materials and nanophotonic structures. The review is concluded by providing perspectives on the challenges and future directions of this field.

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Thermal stability for Te-based devices

Cited by 18 publications

References 24 publications

Tellurium Single‐Crystal Arrays by Low‐Temperature Evaporation and Crystallization

Tellurium Single‐Crystal Arrays by Low‐Temperature Evaporation and Crystallization

Atomic Layer Deposition Route to Scalable, Electronic-Grade van der Waals Te Thin Films

Infrared Photodetectors Based on 2D Materials and Nanophotonics

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