2D materials, such as graphene, transition metal dichalcogenides, black phosphorus, and tellurium, have been demonstrated to be promising building blocks for the fabrication of next-generation high-performance infrared (IR) photodetectors with diverse device architectures and impressive device performance. Integrating IR photodetectors with nanophotonic structures, such as surface plasmon structures, optical waveguides, and optical cavities, has proven to be a promising strategy to maximize the light absorption of 2D absorbers, thus enhancing the detector performance. In this review, the state-of-the-art progress of IR photodetectors is comprehensively summarized based on 2D materials and nanophotonic structures. First, the advantages of using 2D materials for IR photodetectors are discussed. Following that, 2D material-based IR detectors are classified based on their composition, and their detection mechanisms, key figures-of-merit, and the principle of absorption enhancement are discussed using nanophotonic approaches. Then, recent advances in 2D material-based IR photodetectors are reviewed, categorized by device architecture, i.e., photoconductors, van der Waals heterojunctions, and hybrid systems consisting of 2D materials and nanophotonic structures. The review is concluded by providing perspectives on the challenges and future directions of this field.
The complementary metal oxide semiconductor (CMOS) microbolometer technology provides a low-cost approach for the long-wave infrared (LWIR) imaging applications. The fabrication of the CMOS-compatible microbolometer infrared focal plane arrays (IRFPAs) is based on the combination of the standard CMOS process and simple post-CMOS micro-electro-mechanical system (MEMS) process. With the technological development, the performance of the commercialized CMOS-compatible microbolometers shows only a small gap with that of the mainstream ones. This paper reviews the basics and recent advances of the CMOS-compatible microbolometer IRFPAs in the aspects of the pixel structure, the read-out integrated circuit (ROIC), the focal plane array, and the vacuum packaging.
The metal-type microbolometers in CMOS technology normally suffer low resistivity and high thermal conductivity, limiting their performance and application areas. In this paper, we demonstrate a polysilicon microbolometer fabricated in 0.18 µm CMOS and post-CMOS processes. The detector is composed of a SiO2 absorber coupled with a salicided poly-Si thermistor that has a high resistivity of 1.37×10−4 Ω·cm and low thermal conductivity of 18 W/m·K. It is experimentally shown that the microbolometer with a 40 µm × 40 µm pixel size has a maximum responsibility and detectivity of 2.13×104 V/W and 2.33×109 cmHz1/2/W, respectively. The results are superior to the reported metal-type and diode-type microbolometers in the CMOS process and provide good potential for a low-cost, high-performance, uncooled microbolometer array for infrared imaging applications.
Although semiconductor nanowire (NW) photodetectors are promising building blocks for nanoscale on‐chip optoelectronic integration applications, poor absorption, and strong light polarization dependence due to their inherent anisotropic geometry remain an issue. Here, a polarization‐insensitive photodetector is designed and experimentally demonstrated, which consists of an InP NW embedded in a dual‐split bull's eye (DSBE) plasmonic antenna. The resultant photodetector exhibits a low noise equivalent power of 0.97 pW and a photoresponsivity of 0.96 A W‐1 at 740 nm with an external quantum efficiency of 163%. Importantly, the device exhibits an ultralow polarization dependence characteristic with a polarization degree significantly reduced from 91% down to 6%. The improved performance stems from the intrinsic symmetry of the orthogonal DSBE and the strong surface plasmon coupling, which significantly boosts the optical concentration abilities at all polarization angles as compared to the bare NW photodetector. This NW photodetector‐antenna design provides a pathway for the development of high‐performance nanoscale photodetectors for applications in advanced sensing, imaging, and quantum communications.
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