Thermal resistance calculation of AlGaN-GaN devices

Darwish, Ali; Bayba, Andrew J.; Hung, H. Alfred

doi:10.1109/tmtt.2004.837200

Cited by 143 publications

(85 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In the ON-state, the temperature in the device can significantly increase due to high power dissipation. Although the channel temperature can be calculated or measured through various methods [29]- [31], it is difficult to precisely estimate the temperature at the exact region where this trapping process occurs. As a result, experiments where no self-heating occurs are preferred to extract E a .…”

Section: A Trapping Behaviormentioning

confidence: 99%

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

Joh

Alamo

2011

IEEE Trans. Electron Devices

379

245

View full text Add to dashboard Cite

Abstract-Trapping is one of the most deleterious effects that limit performance and reliability in GaN HEMTs. In this paper, we present a methodology to study trapping characteristics in GaN HEMTs that is based on current-transient measurements. Its uniqueness is that it is amenable to integration with electrical stress experiments in long-term reliability studies. We present the details of the measurement and analysis procedures. With this method, we have investigated the trapping and detrapping dynamics of GaN HEMTs. In particular, we examined layer location, energy level, and trapping/detrapping time constants of dominant traps. We have identified several traps inside the AlGaN barrier layer or at the surface close to the gate edge and in the GaN buffer.

show abstract

Section: A Trapping Behaviormentioning

confidence: 99%

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

Joh

Alamo

2011

IEEE Trans. Electron Devices

379

245

View full text Add to dashboard Cite

show abstract

“…A few methods have been proposed for temperature estimation in GaN HEMTs [1]- [3]. Theoretical modeling is widely used to estimate the channel temperature of a device [1].…”

Section: Introductionmentioning

confidence: 99%

“…Theoretical modeling is widely used to estimate the channel temperature of a device [1]. However, modeled data can differ from reality due to inaccuracies in material parameters and their dependence on temperature and stress, and heat source distributions.…”

Section: Introductionmentioning

confidence: 99%

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

Joh

Alamo

Chowdhury³

et al. 2009

IEEE Trans. Electron Devices

149

View full text Add to dashboard Cite

Abstract-In this paper, a simple and reliable method to estimate the channel temperature of GaN high-electron mobility transistors (HEMTs) is proposed. The technique is based on electrical measurements of performance-related figures of merit (I D max and R ON ) with a synchronized pulsed I-V setup. As our technique involves only electrical measurement, no special design in device geometry is required, and packaged devices can be measured. We apply this technique to different device structures and validate its sensitivity and robustness.

show abstract

“…Ram-Mohan and J.R. Meyer (1995); A.M. Darwish et al (2004)]. While DFT models provide an accurate description of electronic ground state properties, they are typically limited to a few hundred atoms due to the high computational effort required [Y.-S. Kim et al (2010); S.-H. Wei and A. Zunger (1998a)].…”

Section: Introductionmentioning

confidence: 99%

Metropolis Monte Carlo based Relaxation of Atomistic III-V Semiconductor Models

Detz

Strasser

2015

IFAC-PapersOnLine

View full text Add to dashboard Cite

We present atomistic simulations of III-V semiconductor materials. These provide an effective way to investigate structural properties of semiconductors at a nanometric scale. The crystal structure is relaxed using a Metropolis Monte Carlo scheme, where chemical bonds are described through empirical interaction potentials. The method provides a simplified structural model, which allows to determine elastic properties like the bulk and shear modulus with errors around 5 and 10 %. Simulations on random alloys led to a composition-dependent bimodal bond length distribution, stemming from the constituent binary compounds, which was also observed experimentally. In contrast to this, CuPt-ordered structures, which can form spontaneously during epitaxial processes, were shown to exhibit a distinct fourfold bond length pattern leading to built-in strain. The Metropolis Monte Carlo approach also allows modelling at higher temperatures. The asymmetry of the empirical potential function leads to thermal expansion, although this effect is in general overestimated due to the missing Coulomb interaction, which is characteristic of III-V materials.

show abstract

Thermal resistance calculation of AlGaN-GaN devices

Cited by 143 publications

References 11 publications

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

Metropolis Monte Carlo based Relaxation of Atomistic III-V Semiconductor Models

Contact Info

Product

Resources

About