Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

Joh, Jungwoo; Alamo, J.A. del; Chowdhury, U.; Chou, Tso-Min; Tserng, H.Q.; Jiménez, José

doi:10.1109/ted.2009.2032614

Cited by 149 publications

(75 citation statements)

References 17 publications

(21 reference statements)

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“…The equipment needed for these temperature assessments is available in standard electrical testing laboratories. Different methods are used, all based on measuring changes in temperature dependent electrical parameters, including: Saturated drain current [10][11][12][13][14]; gate leakage current and threshold voltage, among other parameters. These techniques offer no spatial resolution as such, but instead are sensitive to the entire periphery of the device channel [14].…”

Section: Techniquesmentioning

confidence: 99%

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Kuball

Pomeroy

2016

IEEE Trans. Device Mater. Relib.

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This is the author accepted manuscript (AAM). The final published version (version of record) is available online via IEEE at http://ieeexplore.ieee.org/document/7590091. Please refer to any applicable terms of use of the publisher. University of Bristol -Explore Bristol Research General rightsThis document is made available in accordance with publisher policies. Please cite only the published version using the reference above. Full terms of use are available: http://www.bristol.ac.uk/pure/about/ebr-termsAbstract-We review the Raman thermography technique, which has been developed to determine the temperature in and around the active area of semiconductor devices with submicron spatial and nanosecond temporal resolution. This is critical for the qualification of device technology, including for accelerated lifetime reliability testing and device design optimization. Its practical use is illustrated for GaN and GaAs based high electron mobility transistors, and opto-electronic devices. We also discuss how Raman thermography is used to validate device thermal models, as well as determining the thermal conductivity of materials relevant for electronic and opto-electronic devices.

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Section: Techniquesmentioning

confidence: 99%

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Kuball

Pomeroy

2016

IEEE Trans. Device Mater. Relib.

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“…Since environmental temperature is controllable, external heating is used to discover the relation between parameters and device temperature. Then, the operating device temperature can be evaluated by measuring one of these three parameters under operation (Joh et al, 2009). Figure 7 shows the schematic diagram of connection during measurement, which supports current-voltage (I-V) measurement, TSP extraction, and the transient thermal characteristics.…”

Section: Transient Thermal Characteristics Analysismentioning

confidence: 99%

Thermal performance evaluation of cascode Paralleled-GaN-HEMTs packaging for high power switching applications

Chou

Cheng

2017

JTST

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“…At high frequencies above a few megahertz, the RF I ds is activated through virtual inductances in the equivalent circuit model. Equations for the DC I ds are defined in (1)- (10). Each model parameter is optimized and fitted in comparison with measured DC-IV curves and S-parameters by ADS 2013.…”

Section: Large-signal Modeling Of the Gan Hemtmentioning

confidence: 99%

6-18 GHz Reactive Matched GaN MMIC Power Amplifiers with Distributed L-C Load Matching

Kim¹,

Choi²,

Lee³

et al. 2016

Journal of electromagnetic engineering and science

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A commercial 0.25 μm GaN process is used to implement 6-18 GHz wideband power amplifier (PA) monolithic microwave integrated circuits (MMICs). GaN HEMTs are advantageous for enhancing RF power due to high breakdown voltages. However, the large-signal models provided by the foundry service cannot guarantee model accuracy up to frequencies close to their maximum oscillation frequency (Fmax). Generally, the optimum output load point of a PA varies severely according to frequency, which creates difficulties in generating watt-level output power through the octave bandwidth. This study overcomes these issues by the development of in-house large-signal models that include a thermal model and by applying distributed L-C output load matching to reactive matched amplifiers. The proposed GaN PAs have successfully accomplished output power over 5 W through the octave bandwidth. This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/ by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. ⓒ

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Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

Cited by 149 publications

References 17 publications

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Thermal performance evaluation of cascode Paralleled-GaN-HEMTs packaging for high power switching applications

6-18 GHz Reactive Matched GaN MMIC Power Amplifiers with Distributed L-C Load Matching

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