Thermal properties of high quality single crystals of bismuth telluride—Part I: Experimental characterization

Thermal annealing effect on structural and thermoelectric properties of hexagonal Bi2Te3 nanoplate thin films by drop-casting technique

“…As the annealing temperature increases, the Seebeck coefficient of the nanoplate thin films approaches zero. This phenomenon occurred because the atomic composition of the thin films was different from the stoichiometric composition owing to partial atomic evaporation, 34) as shown in Figs. 3 and 4.…”

Thermoelectric transport in surface- and antimony-doped bismuth telluride nanoplates

“…28 For Bi 2 Te 3 the electron and hole mobilities are similar. 26,27 Therefore, we do not expect the sign of the Seebeck coefficient in this system to differ from that expected for its Hall coefficient. We note that obtaining the dominant carrier type from Seebeck coefficient measurements is an established practice for Bi 2 Te 3 and the (Bi 1−x Sb x ) 2 Te 3 system.…”

“…We note that obtaining the dominant carrier type from Seebeck coefficient measurements is an established practice for Bi 2 Te 3 and the (Bi 1−x Sb x ) 2 Te 3 system. 2,27,[29][30][31] While the measured Seebeck coefficient suggests p-type transport for the samples with x = 0.25 or higher, p-type transport was observed only for x ≥ 0.94 in an earlier work, 16 where x is defined by the precursor flux composition in molecular beam epitaxy (MBE). In contrast, p-type behavior was only observed for samples with x < 0.5 in another work, 15 where x is defined by the source composition.…”

“…As with Bi 2 Te 3 nanoplates, the magnitude of S for the Sb-substituted nanoplates was reduced considerably compared to the maximum reported bulk Bi 2 Te 3 values, 225 and −250 µV K −1 for p-and n-type, respectively, at room temperature. 26,27 The positive and negative Seebeck coefficient values suggest that the majority carriers are holes and electrons, respectively. It is noted that the measurement device used here is not able to obtain Hall coefficient data on the same suspended sample for which the thermoelectric properties are measured.…”

Band gap engineering of Si-Ge alloys for mid-temperature thermoelectric applications

“…Since dissipation from various heat sources occurs over a wide temperature range, thermoelectric based technology therefore becomes a ubiquitous choice not only for energy generation but also to improve the over-all efficiency. For near room temperature applications (T < 450 K), Bi 2 Te 3 based materials prove to be the choice, [1][2][3][4][5][6][7][8][9] while for high temperature (T > 900 K) applications it is the Si-Ge based alloys. For thermoelectric applications in the mid-temperature range (400 -900 K) the search for an ideal material is being intensely pursued by scientists and engineers.…”