Thermoelectric transport in surface- and antimony-doped bismuth telluride nanoplates

Pettes, Michael T.; Kim, Jae-Hyun; Wu, W.; Bustillo, Karen C.; Shi, Li

doi:10.1063/1.4955400

Cited by 22 publications

(22 citation statements)

References 34 publications

(38 reference statements)

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“…Given the fact that size-dependence or sample-to-sample variation in thermopower for the different nanowires in this study is not observed is a valid approach to reduce the number of adjustable parameters in this study. Other surface effects will become observable at much smaller length scales than the focus of this report 50 , 51 .…”

Section: Theoretical Methodsmentioning

confidence: 91%

Thermoelectric properties of SnSe nanowires with different diameters

Hernández

Ruiz

Fonseca

et al. 2018

Sci Rep

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Tin selenide (SnSe) has been the subject of great attention in the last years due to its highly efficient thermoelectricity and its possibilities as a green material, free of Pb and Te. Here, we report for the first time a thermoelectricity and transport study of individual SnSe micro- and nano-wires with diameters in the range between 130 nm and 1.15 μm. X-ray diffraction and transmission electron microscopy analyses confirm an orthorhombic SnSe structure with Pnma (62) symmetry group and 1:1 Sn:Se atomic ratio. Electrical and thermal conductivity and the Seebeck coefficient were measured in each individual nanowire using a specialized suspended microdevice in the 150–370 K temperature range, yielding a thermal conductivity of 0.55 Wm−1 K−1 at room temperature and ZT ~ 0.156 at 370 K for the 130 nm diameter nanowire. The measured properties were correlated with electronic information obtained by model simulations and with phonon scattering analysis. The results confirm these structures as promising building blocks to develop efficient temperature sensors, refrigerators and thermoelectric energy converters. The thermoelectric response of the nanowires is compared with recent reports on crystalline, polycrystalline and layered bulk structures.

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Section: Theoretical Methodsmentioning

confidence: 91%

Thermoelectric properties of SnSe nanowires with different diameters

Hernández

Ruiz

Fonseca

et al. 2018

Sci Rep

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“…6 do not indicate obvious percolation among the Bi 2 Te 3 domains, as was also the case for the micrographs of He et al 16 Even so, if the domains were percolated, then they would have formed a parallel conducting path alongside the polymer matrix. With a 1/3 volume fraction of Bi 2 Te 3 and a parallel model, 25 taking our determined values of 3 S/cm for σ and 40 μV/K for S of the polymer phase and literature values 26,27 of 200 S/cm and 150 μV/K for the p-type Bi 2 Te 3 , we would calculate unrealistically high values of 70 S/cm and 140 μV/K for our materials.…”

Section: Discussionmentioning

confidence: 92%

Contributions to composite conductivity and Seebeck coefficient in commercial Bi2Te3—Conjugated polymer composites

Huang

Kirksey

et al. 2019

Journal of Applied Physics

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We demonstrated the use of as-received conjugated polymer P3HT [poly (3-hexylthiophene-2,5 diyl)] doped with F4TCNQ (2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane) as a matrix for forming a composite with as-received, commercially available p-type Bi2Te3 powder. The optimized formulation exhibits a power factor of up to 5.3μWK−2m−1, about nine times higher than the highest power factor that we achieved from mixtures of only P3HT and F4TCNQ. Bi2Te3 was responsible for increases in both the Seebeck coefficient and the electrical conductivity. P3HT, with a higher hole mobility, was superior to PQT-12 [poly(bisdodecylquaterthiophene)], and F4TCNQ was at least as good as FeCl3, for matrix and dopant, respectively, for this purpose. The power factor obtained is about 40% of that reportedly obtained from synthesized Bi2Te3 nanowires in FeCl3-doped P3HT. We calculated the expected contributions of the bulk Bi2Te3 to the composite conductivity and then examined the resistance caused by interfaces on four different size distributions of Bi2Te3 particles, as well as a solid macroscopic ingot. A nonlinear I–V relationship was found for the doped P3HT-ingot bilayer. While our doped conjugated polymer system made only from commercial-grade components was shown to support the extraction of thermoelectric performance by a commonly used inorganic semiconductor, our results also suggest that an advantage of the smallest Bi2Te3 domains, including nanowires, may arise from their having less interfacial resistance than larger Bi2Te3 particles and pieces.

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“…Single elements have been commonly used as doping materials for this purpose. Some elements including Br [11], I [12], Ge [13,14] were reported as a donor, and the other elements such as Sn [15,16], Pb [17,18], Sb [19] were proposed as an acceptor in Bi 2 Te 3 -based alloys. However, these elements are often distributed non-uniformly in the matrix, and even partially activated as a dopant.…”

Section: Introductionmentioning

confidence: 99%

Carrier Modulation in Bi2Te3-Based Alloys via Interfacial Doping with Atomic Layer Deposition

et al. 2020

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The carrier concentration in Bi2Te3-based alloys is a decisive factor in determining their thermoelectric performance. Herein, we propose a novel approach to modulate the carrier concentration via the encapsulation of the alloy precursor powders. Atomic layer deposition (ALD) of ZnO and SnO2 was performed over the Bi2Te2.7Se0.3 powders. After spark plasma sintering at 500 °C for 20 min, the carrier concentration in the ZnO-coated samples decreased, while the carrier concentration in the SnO2-coated samples increased. This trend was more pronounced as the number of ALD cycles increased. This was attributed to the intermixing of the metal ions at the interface. Zn2+ substituted for Bi3+ at the interface acted as an acceptor, while Sn4+ substituted for Bi3+ acted as a donor. This indicates that the carrier concentration can be adjusted depending on the materials deposited with ALD. The use of fine powders changes the carrier concentration more strongly, because the quantity of material deposited increases with the effective surface area. Therefore, the proposed approach would provide opportunities to precisely optimize the carrier concentration for high thermoelectric performance.

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Thermoelectric transport in surface- and antimony-doped bismuth telluride nanoplates

Cited by 22 publications

References 34 publications

Thermoelectric properties of SnSe nanowires with different diameters

Thermoelectric properties of SnSe nanowires with different diameters

Contributions to composite conductivity and Seebeck coefficient in commercial Bi2Te3—Conjugated polymer composites

Carrier Modulation in Bi2Te3-Based Alloys via Interfacial Doping with Atomic Layer Deposition

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