Thermal properties of high power laser bars investigated by spatially resolved thermoreflectance spectroscopy

Pierścińska, Dorota; Pierściński, Kamil; Bugajski, M.; Tomm, Jens W.

doi:10.1002/pssa.200673961

Cited by 9 publications

(7 citation statements)

References 15 publications

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“…The high speed of the reflectance modulation technique allowed to take temperature maps at facets [28,71,117,119,120,[123][124][125][126][127][128]. Furthermore, it became possible to monitor even fairly extended devices such as high power diode laser bars, often called 'cm-bars' (because of the total array width of one cm) [126][127][128]. 431 Bugajski et al [125] have used this technique for analyzing different mounting arrangements via an advanced determination of thermal resistances and for the assessment of different etching technologies.…”

Section: Reflectance Modulation and Thermoreflectancementioning

confidence: 99%

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

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Semiconductor lasers are the most efficient manmade narrow-band light sources and convert up to threequarters of electric energy into light. High-power diode lasers are characterized by very high internal power densities in their small cavity, resulting in local heating and sometimes device degradation. Catastrophic optical damage (COD) of diode lasers is a relevant degradation mechanism and limit for reaching ultrahigh optical powers. An overview is given on research activities targeting the mechanisms being relevant for the COD process in GaAs-based diode lasers emitting in the 630-1100 nm range. The discussion of experiments, where COD is artificially provoked, represents the main topic. The sequence of events and fast kinetics taking place on a nanosecond to microsecond time scale are addressed. A particular emphasis is laid on recent experimental work performed in the authors' laboratories. Paving the way for knowledge-based solutions towards more robust diode lasers represents the ultimate goal of this work. COD diagram determined for a batch of broad-area AlGaAs diode lasers. The time to COD within a single current pulse is plotted versus the actual average optical power in the moment when the COD takes place. Full circles stand for clearly identified COD events (right ordinate), whereas open circles (left ordinate) represent the pulse duration in experiments, where no COD has been detected. A borderline (gray) exists between two regions, i. e., parameter sets, of presence (orange) and absence of COD (blue). This borderline is somewhat blurred because of the randomness in filamentation of the laser nearfield and scatter in properties of the involved individual devices.

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Section: Reflectance Modulation and Thermoreflectancementioning

confidence: 99%

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

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“…Therefore, κ needs to be determined experimentally in case of each device. The following values of thermoreflectance coefficients were obtained as a result of the calibration procedure: 1.54 x 10 5 K for GaAs and average value of 1.96x10 5 K for AR layers [12]. A scheme of the thermoreflectance set-up is presented in the Fig.2.…”

Section: Thermoreflectance Spectroscopy Techniquementioning

confidence: 99%

“…han 1 K. The[12,14] and V[13].Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/21/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx…”

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confidence: 98%

Time resolved FTIR study of spectral tuning and thermal dynamics of mid-IR QCLs

et al. 2014

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The aim of this paper is to address some of the aspects of thermal management of QCLs. Results include electrical and spectral characterization of the devices. Results show shift of QCL emission mode towards lower wavenumbers during the pulse. Characteristics were registered at different temperatures of operation and driving conditions. Registered shift rates depend on operating temperature, being the highest at room temperature. Based on spectral tuning results, temperature increase rates for different modes of operations were evaluated, delivering information on thermal dynamics of investigated devices.

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“…Therefore, κ needs to be determined experimentally in case of each device. The following values of thermoreflectance coefficients were obtained as a result of the calibration procedure: 1.54 x 10 5 K for GaAs and average value of 1.96x10 5 K for AR layers [20]. A scheme of the thermoreflectance set-up is presented in Fig.…”

Section: Thermoreflectance Spectroscopy Techniquementioning

confidence: 99%

Experimental analysis of thermal properties of AlGaAs/GaAs quantum cascade lasers

et al. 2012

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We report on detailed investigation of thermal performance of AlGaAs/GaAs quantum cascade lasers (QCL) emitting at wavelength of 9.4 µm, with a particular emphasis on the influence of different mounting options and device geometries, which are compared in terms of their influence on the relative increase of the active region temperature. The spatially resolved thermoreflectance (TR) is used to register temperature distribution over the facet of pulse operated QCLs. The devices' thermal resistances are derived from experimental data. Thermal resistances of 15 µm devices are the highest among the investigated device widths. By combining the experimental and numerical results, an insight into the thermal management in QCLs is gained. The thermal design focuses on optimization of heat dissipation in the device, improving the thermal behavior of QCLs. This is essential in order to increase the maximal operation temperature to further progress the applications of QCLs.

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Thermal properties of high power laser bars investigated by spatially resolved thermoreflectance spectroscopy

Cited by 9 publications

References 15 publications

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Time resolved FTIR study of spectral tuning and thermal dynamics of mid-IR QCLs

Experimental analysis of thermal properties of AlGaAs/GaAs quantum cascade lasers

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