Thermal oxidation and resistivity of tantalum nitride films

Brady, Dominic; Fuss, F.N.; Gerstenberg, D.

doi:10.1016/0040-6090(80)90383-1

Cited by 22 publications

(2 citation statements)

References 9 publications

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“…Nitrides, such as TiN, exhibit high electrical conductivity, and because the oxidation of nitrides is thermodynamically favorable, − we hypothesized that surface-oxidation of nitrides could result in a high-performing catalyst support that combines durability, electrical conductivity, and potentially cocatalytic activity ,, (Figure ). Such favorable surface passivation has been observed in TiN by Avasarala and Haldar .…”

Section: Introductionmentioning

confidence: 99%

Conductivity and Microstructure of Combinatorially Sputter-Deposited Ta–Ti–Al Nitride Thin Films

et al. 2015

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Materials with long-term durability and electrical conductivity at low pH (<2) and high potentials (∼1.4 V vs RHE) are of great interest as catalyst supports in proton exchange membrane (PEM) fuel cells. We have evaluated Ta−Ti−Al nitrides for this purpose. Combinatorial sputter-deposition of Ta−Ti−Al nitride thin films allowed the composition of these films to be varied spatially over a substrate at ∼1 atomic %/mm, enabling the investigation of the conductivity and microstructure of these materials over a wide range of compositions. Conductive probe atomic force microscopy (cp-AFM) is shown to facilitate high-throughput screening of electrical conductivity as a function of composition. Local, tip-induced oxidation of the film indicated that films annealed in the presence of oxygen were most resistant to oxidation-induced losses of conductivity. Ti-rich compositions exhibited conductivities similar to carbon black and best retained their conductivity after tipinduced oxidation. Small amounts of Ti (∼20 atomic %) were sufficient to impart desired conductivities to compositions rich in Ta and Al, which without Ti exhibited insulating behavior. Electron energy-loss spectroscopy (EELS) imaging revealed the formation of a <2 nm oxide layer at the surface of the nitride films, which is expected to make these materials more durable. Remarkably, high conductivities were observed in the presence of this oxide layer. Segregation of elements was observed at sub-10-nm length scales, yet mapping the lattice constant of the film with X-ray diffraction showed that the majority phase is a wellmixed alloy with a lattice constant that varies smoothly over the entire range of compositions. The rock-salt structure was observed at all compositions except those with high levels of Al.

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Section: Introductionmentioning

confidence: 99%

Conductivity and Microstructure of Combinatorially Sputter-Deposited Ta–Ti–Al Nitride Thin Films

et al. 2015

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“…22. The thermal oxidation of TaN was modeled according to Brady et al 23 using an activation energy of 1.45 eV at temperatures above 250 C where fine-grained body-centered cubic, hexagonal close-packed, and face-centered cubic showed the same oxidation kinetics and activation energy.…”

Section: Formulationmentioning

confidence: 99%

A numerical analysis and experimental demonstration of a low degradation conductive bridge resistive memory device

Berco

Chand

Fariborzi

2017

Journal of Applied Physics

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This study investigates a low degradation metal-ion conductive bridge RAM (CBRAM) structure. The structure is based on placing a diffusion blocking layer (DBL) between the device's top electrode (TE) and the resistive switching layer (RSL), unlike conventional CBRAMs, where the TE serves as a supply reservoir for metallic species diffusing into the RSL to form a conductive filament (CF) and is kept in direct contact with the RSL. The properties of a conventional CBRAM structure (Cu/HfO 2 /TiN), having a Cu TE, 10 nm HfO 2 RSL, and a TiN bottom electrode, are compared with a 2 nm TaN DBL incorporating structure (Cu/TaN/HfO 2 /TiN) for 10 3 programming and erase simulation cycles. The low and high resistive state values for each cycle are calculated and the analysis reveals that adding the DBL yields lower degradation. In addition, the 2D distribution plots of oxygen vacancies, O ions, and Cu species within the RSL indicate that oxidation occurring in the DBL-RSL interface results in the formation of a sub-stoichiometric tantalum oxynitride with higher blocking capabilities that suppresses further Cu insertion beyond an initial CF formation phase, as well as CF lateral widening during cycling. The higher endurance of the structure with DBL may thus be attributed to the relatively low amount of Cu migrating into the RSL during the initial CF formation. Furthermore, this isomorphic CF displays similar cycling behavior to neural ionic channels. The results of numerical analysis show a good match to experimental measurements of similar device structures as well.

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The oxidation and resistance of tantalum-nitride thin films

Ibidunni

1993

Oxid Met

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Thermal oxidation and resistivity of tantalum nitride films

Cited by 22 publications

References 9 publications

Conductivity and Microstructure of Combinatorially Sputter-Deposited Ta–Ti–Al Nitride Thin Films

Conductivity and Microstructure of Combinatorially Sputter-Deposited Ta–Ti–Al Nitride Thin Films

A numerical analysis and experimental demonstration of a low degradation conductive bridge resistive memory device

The oxidation and resistance of tantalum-nitride thin films

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