Thermal nitridation of Si and SiO<sub>2</sub>for VLSI

Moslehi, Mehrdad M.; Saraswat, Krishna C.

doi:10.1109/t-ed.1985.21920

Cited by 182 publications

(47 citation statements)

References 42 publications

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“…The areal density of Si resulting of the extrapolation to 7ero areal density of 0 represents the sum of the single crystalline Si surface peak (approximately 7 x l o t 5 Si cm-2) and the Si atoms at the SiO,/Si(lOO) interface which do not belong to the oxide and are not epitaxial with the Si(100) substrate. The straight line, which fits well the experimental points, corresponds to SiOz stoichiometry staying below 6 nm even for very long nitridation times [9], This is in contrast with the well-known linear-parabolic growth law of SiO,; (ii) the growth rate of Si,N, films has an appreciable temperature dependence as that of SiO, but, in contrast with the pressure dependence of the growth rate of SiO, films (between the growth rate of Si,N, films depends very weakly on the NH, pressure. The kinetics of thermal growth of SiO, and Si,N, films can be measured with high precision by NRA using the plateau regions of the cross sections for the nuclear reactions '"O(d, p1)170 around 0.…”

Section: Kinetics Of Thermal Growth Of Sio and Sin Ultrathin Filmssupporting

confidence: 78%

“…Experiments of isotopic tracing of oxygen during growth have been repeatedly made, confirming this mechanism, unless for ultrathin SiO, films, where the step by step diffusion of atomic 0 reacting with the SiO, [12] assumed at the beginning that the mechanism was somewhat similar to that of SiO,: the nitriding species (nitrogen radicals) diffuse across the growing nitride film to react with Si at the nitride/Si interface. Wu's model was criticized by several authors which proposed a growth mechanism whereby Si atoms diffuse from the Si substrate across the growing Si,N, film to react with NH, at the nitride surface [9,131. This model was consistent with the observation that the nitridation kinetics depends very weakly on the ammonia pressure.…”

Section: Kinetics Of Thermal Growth Of Sio and Sin Ultrathin Filmsmentioning

confidence: 99%

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Nanostructure of the Surface and Interface and Mechanisms of Thermal Growth of Ultrathin Films of Si₃N₄ on Si(001)

Baumvol

Stedile

1995

Physica Status Solidi (b)

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The chemical situation of the Si atoms at the surface of Si,N, ultrathin films thermally grown onto Si(O01) substrates 2 x 1 reconstructed in a NH, atmosphere has been recently studied in detail by core-level spectroscopy using synchrotron radiation, as well as the chemical situation of the Si atoms at the film/substrate interface. The Si atoms at the surface are assigned to be either bonded to N atoms that are located in the layer just below the surface and having one dangling bond, or terminated by NH,. The Si atoms at the interface present intermediate oxidation states. Also recently high resolution isotopic tracing studies of N and H showed that nitrogeneous species (most probably NH, radicals, x < 3) are mobile during thermal growth of silicon nitride films, while isotopic tracing of Si showed that this species appears to be immobile during growth. This newly built experimental scenario for the nanostructure of the surface and interface, and for the atomic transport processes taking place during nitride growth, led us to develop a model for the mechanism of thermal growth of Si,N, ultrathin films on Si( loo), that is capable to explain the self-limited character which makes them extremely attractive for applications in the VLSI and ULSI technologies for microfabrication of silicon devices.

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Section: Kinetics Of Thermal Growth Of Sio and Sin Ultrathin Filmssupporting

confidence: 78%

Section: Kinetics Of Thermal Growth Of Sio and Sin Ultrathin Filmsmentioning

confidence: 99%

Nanostructure of the Surface and Interface and Mechanisms of Thermal Growth of Ultrathin Films of Si₃N₄ on Si(001)

Baumvol

Stedile

1995

Physica Status Solidi (b)

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“…The oxidation of InP has been found 19 to be slow at 3400C, but increases rapidly with temperature, and the oxide film growth rate is initially fast but saturates quickly yielding self-limiting growth. We performed a variety of thermal oxidations of InP in 02 up…”

Section: Resultsmentioning

confidence: 99%

An Oxygen Tracer Study of InP Oxidation

Liu

Denker

Irene

1992

J. Electrochem. Soc.

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The thermal oxidation process for normalInP results in a complex, process dependent oxide. From the observed self‐limiting behavior of the oxide growth, the rate limiting step is most likely the diffusion of reaction species through the growing oxide film. O18 marker oxidation experiments with the resulting secondary ion mass spectroscopy depth profiles reveal that the oxidation takes place at the oxide surface by the outward migration of In and P, rather than at the oxide‐substrate interface. Based on the available results, possible models for the oxidation are proposed.

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“…Silicon nitride film growth on a silicon substrate is known to proceed with a rapid growth rate for film thicknesses up to one monolayer, while further nitridation occurs very slowly [9,10,[17][18][19][20][21]. This is observed on both the Si(I 11) [9,10] and Si( 100) [17][18][19][20][21] surfaces, regardless of the N-containing reactant gas employed, and is characteristic of the self-limiting growth and passivating properties of silicon nitride filns [22].…”

Section: Ill Results and Discussionmentioning

confidence: 99%

Silicon nitride thin film production on Si(111)

Colaianni

Chen

Nagashima

et al. 1993

Journal of Applied Physics

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The production of silicon nitride films by ammonia decomposition on Si(111)-(7×7) has been studied by high-resolution electron energy loss spectroscopy, Auger electron spectroscopy, and low-energy electron diffraction. Silicon nitride films of ≤1 monolayer thickness exhibit a characteristic four mode vibrational spectrum after annealing to 1200 K, while multilayer films produce three vibrational modes at 495, 720, and 1020 cm−1. Upon continued heating of the submonolayer and multilayer nitride films, identical vibrational spectra are obtained, suggesting that both layers form Si3N4. These results are in excellent agreement with the vibrational spectra reported in the literature for Si3N4 layers grown using N atoms on the heated Si(111)-(7×7) surface, signifying that identical nitride films can be grown using ammonia. Si3N4 films grown on Si(111) are able to chemisorb ammonia at 300 K, showing that coordinatively unsaturated silicon sites are probably present on the film surface. This is in agreement with other studies which indicate that the growth mechanism for these silicon nitride films involves silicon enrichment at the film/vacuum interface.

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Thermal nitridation of Si and SiO₂for VLSI

Cited by 182 publications

References 42 publications

Nanostructure of the Surface and Interface and Mechanisms of Thermal Growth of Ultrathin Films of Si₃N₄ on Si(001)

Nanostructure of the Surface and Interface and Mechanisms of Thermal Growth of Ultrathin Films of Si₃N₄ on Si(001)

An Oxygen Tracer Study of InP Oxidation

Silicon nitride thin film production on Si(111)

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Thermal nitridation of Si and SiO2for VLSI

Cited by 182 publications

References 42 publications

Nanostructure of the Surface and Interface and Mechanisms of Thermal Growth of Ultrathin Films of Si3N4 on Si(001)

Nanostructure of the Surface and Interface and Mechanisms of Thermal Growth of Ultrathin Films of Si3N4 on Si(001)

An Oxygen Tracer Study of InP Oxidation

Silicon nitride thin film production on Si(111)

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Product

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Thermal nitridation of Si and SiO₂for VLSI

Nanostructure of the Surface and Interface and Mechanisms of Thermal Growth of Ultrathin Films of Si₃N₄ on Si(001)

Nanostructure of the Surface and Interface and Mechanisms of Thermal Growth of Ultrathin Films of Si₃N₄ on Si(001)