Abstract:The chemical situation of the Si atoms at the surface of Si,N, ultrathin films thermally grown onto Si(O01) substrates 2 x 1 reconstructed in a NH, atmosphere has been recently studied in detail by core-level spectroscopy using synchrotron radiation, as well as the chemical situation of the Si atoms at the film/substrate interface. The Si atoms at the surface are assigned to be either bonded to N atoms that are located in the layer just below the surface and having one dangling bond, or terminated by NH,. The … Show more
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