2012
DOI: 10.1016/j.mee.2012.07.098
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Thermal nanoimprint resist for the fabrication of high-aspect-ratio patterns

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Cited by 4 publications
(4 citation statements)
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“…Karlsson et al fabricated HAR nanostructures in polycrystalline diamond using NIL with a feature size of 300 nm and a depth of 2 μm [ 6 ]. HAR patterns were fabricated employing a newly developed Si-containing thermal NIL resist by Messerschmidt et al [ 7 ]. Lee et al used thermal NIL to fabricate a GaN light-emitting diode (LED) with three highly refractive patterned structures: submicron holes, microconvex arrays, and HAR pillars [ 8 ].…”
Section: Introductionmentioning
confidence: 99%
“…Karlsson et al fabricated HAR nanostructures in polycrystalline diamond using NIL with a feature size of 300 nm and a depth of 2 μm [ 6 ]. HAR patterns were fabricated employing a newly developed Si-containing thermal NIL resist by Messerschmidt et al [ 7 ]. Lee et al used thermal NIL to fabricate a GaN light-emitting diode (LED) with three highly refractive patterned structures: submicron holes, microconvex arrays, and HAR pillars [ 8 ].…”
Section: Introductionmentioning
confidence: 99%
“…Initially SiPol was developed to be used in bilayer system with an organic transfer layer UL1 ( Fig. 1 a-b) [20]. In a standard process, the patterned SiPol layer is thinned down by fluorine based etching chemistry, thus etching both the organic and inorganic content of SiPol, which results in removal of the residual layer.…”
Section: Methodsmentioning
confidence: 99%
“…In this work we present a method capable of pattern DLC films in a straightforward way by using thermal nanoimprint lithography (T-NIL) [19] with the silicon containing SiPol resist (micro resist technology GmbH) [20]. The SiPol standard process was optimized, further simplifying the nanoimprint steps for a pattern transfer in DLC using it as a hard mask.…”
Section: Introductionmentioning
confidence: 99%
“…All of these processes have in common that the original structure is a means to make a second step possible. During the last year release of structures in membrane-like devices, additive and subtractive techniques such as etching, lift-off and electroplating were demonstrated and used for different applications [5,33,43,44,91,114,135].…”
Section: Pattern Transfer and Post-processingmentioning
confidence: 99%