Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach

Kemp, Alan J.; Valentine, G.J.; Hopkins, James F.; Hastie, Jennifer E.; Smith, Scott A.; Calvez, S.; Dawson, Martin D.; Burns, D.

doi:10.1109/jqe.2004.839706

Cited by 119 publications

(59 citation statements)

References 21 publications

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“…[3][4][5][6][7][8][9]. Different thermal management techniques including thin device or heat spreader approaches have been a subject of thermal modelling [3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

“…Different thermal management techniques including thin device or heat spreader approaches have been a subject of thermal modelling [3][4][5][6][7]. Moreover, various factors which influence the temperature increase within laser vol− ume such as: pumping−beam properties (e. g., power [5,7], diameter [3,5,8], wavelength [5,6,8], spatial profile [5]), as well as thermal conductivity or thickness of heat spreader [3][4][5][6][7]9], window [5] and DBR mirror layers [7] have been investigated. In this paper the complex comparative analysis of different VECSEL configurations (e.g., as−grown, thin device, heat spreader approaches) has been presented in form of so−called 'thermal maps' which enable determining the maximum temperature at specified pumping conditions in a quick and simple way, so they can be very useful, espe− cially at VECSEL designing.…”

Section: Introductionmentioning

confidence: 99%

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Thermal management of GaInNAs/GaAs VECSELs

Sokół

Sarzała

2013

Opto-Electronics Review

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Different methods used to reduce temperature increase within the active region of vertical-external-cavity surface-emitting lasers (VECSELs) are described and compared with the aid of the self-consistent thermal finite-element method. Simulations have been carried out for the GaInNAs/GaAs multiple-quantum-well (MQW) VECSEL operating at room temperature at 1.31 μm. Main results are presented in form of ‘thermal maps’ which can be simply used to determine maximal temperature of different structures at specified pumping conditions. It has been found that these maps are also appropriate for some other GaAs-based VECSELs and can be very helpful especially during structure designing. Moreover, convective and thermal radiation heat transfer from laser walls has been investigated.

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“…[3][4][5][6][7][8][9]. Different thermal management techniques including thin device or heat spreader approaches have been a subject of thermal modelling [3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thermal management of GaInNAs/GaAs VECSELs

Sokół

Sarzała

2013

Opto-Electronics Review

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“…As such, it is chosen to be pump (and signal) transparent and to provide a sufficient electronic barrier for the carriers. The selection of a highly-thermally-conductive material is favoured to help with heat dissipation [40]. Thickness adjustments of this layer are also often used to suitably tailor the sub-cavity resonance(s) resulting from the FabryPerot interference between the semiconductor chip surface and the DBR.…”

Section: Semiconductor Chip Designmentioning

confidence: 99%

“…To be effective, the heatspreader must offer a much greater thermal conductivity than the semiconductor substrate and be sufficiently thick (typically > 100 μm for diamond) to allow unconstrained heat dissipation to the contact ring (see Fig. 6) [40]. As an intra-cavity element, it also needs to be transparent with low scattering loss at the emission and pump wavelengths [53] and preferably of controlled birefringence to avoid unwanted polarisation loss [42,44].…”

Section: Thermal Managementmentioning

confidence: 99%

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Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Calvez¹,

Hastie

Guina

et al. 2009

Laser & Photonics Reviews

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154

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Recent developments in semiconductor disk lasers (SDLs) generating visible or ultraviolet light are reviewed. After an introduction on potential applications, we discuss how the combination of vertical-emitting semiconductor GaAs-based structures and intra-cavity nonlinear conversion techniques can be successfully exploited to uniquely meet demands for continuous-wave radiation in the visible and ultraviolet spectral range. To do so, an overview of the device operating principles and performance is presented highlighting the underlying material considerations, semiconductor structural designs, thermal management techniques and suitable cavity configurations. This summary is completed by a presentation of new developments in the field, with a particular focus on the trends towards miniaturization.Green-pumped direct-red-emitting Semiconductor Disk Laser.

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VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

Kuznetsov¹

2010

Semiconductor Disk Lasers

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Since its invention and demonstration in 1960, several types of laser have been developed, such as solid-state, semiconductor, gas, excimer, and dye lasers [1]. Today, lasers are used in a wide range of important applications, particularly in optical fiber communication, optical digital recording (CD, DVD, and Blu-ray), laser materials processing, biology and medicine, spectroscopy, imaging, entertainment, and many others. A number of properties enable the application of lasers in these diverse areas, each application requiring a particular combination of these properties. Some of the most important laser properties are laser emission wavelength; output optical power; method of laser excitation, whether by optical pumping or electrical current injection; laser power consumption and efficiency; high-speed modulation or short pulse generation ability; wavelength tunability; output beam quality; device size; and so on. Thus, optical fiber communication [2], a major application that enables modern Internet, commonly requires lasers with emission wavelengths in the 1.55 mm lowloss band of glass fibers and with single-transverse mode output beams for coupling into single-mode optical fibers. Typically, a given laser type excels in some of these properties, while exhibiting shortcomings in others. For example, by using different material compositions and structures, the most widely used semiconductor diode laser [3][4][5][6][7][8][9][10][11][12] can cover a wide range of wavelengths from the ultraviolet (UV) to the mid-IR, can be advantageously driven by diode current injection, and is very compact and efficient. However, the good beam quality, that is, single-transverse mode nearcircular beam operation, can be typically achieved in semiconductor lasers only for output powers below 1 W. Much higher power levels are achievable from semiconductor lasers only with large aspect ratio highly multimoded poor quality optical beams. On the other hand, the solid-state lasers [13,14], including fiber lasers [15], can emit hundreds of watts of output power with excellent beam quality, however, their emission wavelengths are restricted to discrete values of electronic transitions in ions, such as the classic 1064 nm wavelength of the Nd:YAG laser, making them Semiconductor Disk Lasers. Physics and Technology. Edited by Oleg G. Okhotnikov

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Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach

Cited by 119 publications

References 21 publications

Thermal management of GaInNAs/GaAs VECSELs

Thermal management of GaInNAs/GaAs VECSELs

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

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