Thermal instability of GaSb surface oxide

Tsunoda, Koji; Matsukura, Yusuke; Suzuki, Ryō; Aoki, Masahiro

doi:10.1117/12.2223583

Cited by 4 publications

(4 citation statements)

References 9 publications

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“…In a long-time air oxidation study, it could be shown that a 3 nm thick native oxide layer appears on GaSb within one day whereas after 3 years this layer increases only moderately by 1 nm [9]. The hydrolytic stability for InAs in neutral water was reported [10], but GaSb oxidizes in an aqueous environment [11,12].…”

Section: Introductionmentioning

confidence: 99%

Phosphonate monolayers on InAsSb and GaSb surfaces for mid-IR plasmonics

Bomers

Mezy²,

Cerutti

et al. 2018

Applied Surface Science

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Stable functionalization of semiconductor surfaces is a prerequisite for all-semiconductor mid-IR biophotonics. This work demonstrates the adsorption of phosphonic acids on oxygen plasma activated GaSb and InAsSb surfaces. X-ray photoelectron spectroscopy shows that oxygen plasma treatment, used to activate the investigated III-V surfaces, increases the surface oxide layer beyond its native oxide thickness. Phosphonates with different terminal groups, either ethylene glycol or fluorinate carbon terminated groups, allow to modify the hydrophobicity of the surfaces and to protect the surfaces by an anti-fouling cover layer. Infrared spectroscopy indicates partial deprotonation of the phosphonic acid and thus phosphonate bonding to the surfaces. Adsorption of phosphonates on an all-semiconductor mid-IR plasmonic grating structure is detected by a shift and by a shape modulation of the plasmonic resonance peak. Compared with molecule adsorption on flat mirror-like layers a tenfold signal enhancement is found. The adsorbed molecules are stable upon baking at 120° C, ultrasonic cleaning with organic solvents and storage for several weeks at ambient conditions. These results show that stable functionalization of InAsSb and GaSb surfaces by phosphonate monolayers is possible. All-semiconductor enhanced plasmonic sensing in the mid-IR was demonstrated.

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Section: Introductionmentioning

confidence: 99%

Phosphonate monolayers on InAsSb and GaSb surfaces for mid-IR plasmonics

Bomers

Mezy²,

Cerutti

et al. 2018

Applied Surface Science

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“…The hydrolytic stability of InAs in neutral water was reported . However, GaSb is not stable in aqueous environment. ,, A water-free surface chemistry is thus required to prevent the oxidation of GaSb in water, which is much faster and more detrimental than the air oxidation. Trimethoxysilane derivatives are an interesting approach for monolayer formation on metal oxides, and we demonstrate in the following the successful surface modification by silane surface chemistry.…”

Section: Resultsmentioning

confidence: 99%

Surface-Enhanced Thermal Emission Spectroscopy with Perfect Absorber Metasurfaces

et al. 2019

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Surface-enhanced spectroscopy techniques using plasmonic nanoantennas or metasurfaces help to reduce the detection limit for biochemical sensing. While infrared spectroscopy is an excellent tool to identify a molecular species, a typically expensive IR light source is needed. We report a surface enhanced spectroscopy technique based on the thermal emission of III–V semiconductor metasurfaces. The presence of a molecular species grafted on the surface modulates the emission spectrum analogously to the modulation achieved in surface-enhanced infrared absorption (SEIRA) spectroscopy. The vibrational fingerprint of the molecular species is detected due to the electromagnetic field enhancement obtained with a plasmonic metasurface. Because the metasurface acts simultaneously as radiation source and sensor chip, the experimental setup is simplified and therefore more compact and potentially more cost-efficient. This novel approach of surface-enhanced thermal emission spectroscopy (SETES) is appealing for miniaturized and integrated molecular sensing devices.

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“…In short, while InAs is stable in H 2 O [25], GaSb oxidizes in water. Several studies mention the oxidation process in water, but most focus on the first hours after immersion [26]. In this work we investigate the oxidation of GaSb up to 81 h of immersion in water and we map the homogeneity of this process with an attenuated total reflection (ATR) microscope.…”

Section: Introductionmentioning

confidence: 99%

Pedestal formation of all-semiconductor gratings through GaSb oxidation for mid-IR plasmonics

Bomers

Barho

Milla-Rodrigo³

et al. 2018

J. Phys. D: Appl. Phys.

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Mid-IR localized surface plasmon resonances (LSPR) have been demonstrated in nano-ribbons of highly Si-doped InAsSb alloys on GaSb substrates. We show that the slow, steady and selective oxidation of GaSb in water leads to an all-semiconductor mid-IR pedestal configuration consisting of highly doped InAsSb plasmonic resonators on top of GaSb pedestals embedded in an amorphous oxide layer. The homogeneity of the pedestal structure is imaged with an attenuated-total reflection Fourier transform infrared (ATR-FTIR) microscope by measuring around the plasmonic excitation at the plasma wavelength of 5.5 µm. As the plasmonic properties are influenced by modifications of the surrounding medium, we show for all-semiconductor gratings with defined doping level and defined grating geometry, that the GaSb oxidation process allows post-fabrication targeting of mid-IR plasmonic resonances to cover the mid-IR range from 5 to 20 µm. Additionally the pedestal formation reduces the refractive index mismatch between the two interfaces of the plasmonic resonators which allows to exploit a second plasmonic peak and which favors plasmonic field enhancement at the top (air-) side of the structure relevant for enhanced molecular vibration spectroscopy.

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Thermal instability of GaSb surface oxide

Cited by 4 publications

References 9 publications

Phosphonate monolayers on InAsSb and GaSb surfaces for mid-IR plasmonics

Phosphonate monolayers on InAsSb and GaSb surfaces for mid-IR plasmonics

Surface-Enhanced Thermal Emission Spectroscopy with Perfect Absorber Metasurfaces

Pedestal formation of all-semiconductor gratings through GaSb oxidation for mid-IR plasmonics

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