Thermal expansion of GaSb measured by temperature dependent x-ray diffraction

Abstract

X-ray diffraction measurements were performed using a modified zone technique on Te-doped GaSb wafers, commonly used for molecular beam epitaxial growth, at temperatures between 32 and 546 °C to determine the thermal expansion. The authors found the thermal expansion to be very close to the data published by Bublik et al. [Phys. Status Solidi A 73, K271 (1982)]. Control measurements of the lattice constant of Si were found to agree with the results published by Okada and Tokumaru [J. Appl. Phys. 56, 314 (1984)] within our measurement error of ±2×10−4 Å. A fourth order polynomial, a(GaSb)(T)=6.0959+3.37×10−5T+5.63×10−8T2−1.29×10−10T3+1.05×10−13T4 (Å) (T in °C), was found to be a good fit to our data, while a linear fit with a constant thermal expansion coefficient of 7.17×10−6 K−1 was found to be a poorer fit.

Temperature-Dependent X-ray Diffraction Measurements of Infrared Superlattices Grown by MBE

“…The Adachi model is the closest, with a linear CTE of 3.87 × 10 −5 Å/K, and an intercept of 6.09593 Å at 298 K [22]. The lattice constant of GaSb was calculated using both experimental data and empirical/theoretical models [16,[20][21][22]. The results are found in Figure 3.…”

“…The out-of-plane strains, based on a full elastic approach, are −0.258% at 298 K and −0.191% at 173 K. The FWHM of the SL +1 peak is 74 arcsec at 298 K in ω-2θ notation. The lattice constant of GaSb was calculated using both experimental data and empirical/theoretical models [16,[20][21][22]. The results are found in Figure 3.…”

“…A linear fit is performed across the temperature range, which indicates that the linear CTE for GaSb is 3.46 × 10 −5 Å/K, with an intercept of 6.09642 Å at 298 K. Vurgaftman uses a value of 4.72 × 10 −5 Å/K, but the differences could be explained by substrate doping or improvements in substrate quality [16,21]. The Nilsen model used a fourth-order polynomial and was performed over a different temperature range (305-819 K), which could explain the larger error at low temperatures [20]. Nilsen's linear CTE estimate is 4.37 × 10 −5 Å/K, which is slightly closer to our estimate.…”

Thermal dependence of the lattice constant and the Poisson ratio of AlSb above room temperature

“…The lattice constant of AlSb at RT used in literature was determined by Giesecke and Pfister [5] in 1957 and was reproduced by Bocchi et al [6] in 1996. However, the original work by Giesecke and Pfister included measurements of several III-V materials and their findings on the lattice constant of GaSb is not in agreement with later published results [7,8]. In addition, the reproduction by Bocchi et al [6] used the GaSb lattice constant value published by Straumanis and Kim [9], which is not in agreement with later works [7,8], to calculate the AlSb lattice constant from the separation between the AlSb peak and GaSb substrate peak in their X-ray diffraction (XRD) measurements.…”

“…A modified version [8] of the zone technique [13,14] was used to determine a x and a z of the AlSb layer of each sample. Table 1 shows the reflections measured for the different materials on the two samples.…”