2004
DOI: 10.1016/j.jnoncrysol.2004.03.028
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Thermal expansion dependence on the sp2 concentration of amorphous carbon and carbon nitride

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Cited by 12 publications
(8 citation statements)
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“…In addition, some nanowires, depicted in Figure (c,d), may have indirectly indicated the presence of a large number of short chains, and this could have led to the expansion. However, previous studies with g ‐C 3 N 4 also showed that nitrogen incorporation for ag‐C 3 N 4 favored the formation of terminal atoms, such as H and Cl, and terminal groups to suppress the expansion, in particular when N was involved in an ordered and sp 2 ‐bonded structure . Furthermore, ag‐C 3 N 4 had a relatively large surface size (918 nm) and a triazine‐rich structure.…”
Section: Resultsmentioning
confidence: 99%
“…In addition, some nanowires, depicted in Figure (c,d), may have indirectly indicated the presence of a large number of short chains, and this could have led to the expansion. However, previous studies with g ‐C 3 N 4 also showed that nitrogen incorporation for ag‐C 3 N 4 favored the formation of terminal atoms, such as H and Cl, and terminal groups to suppress the expansion, in particular when N was involved in an ordered and sp 2 ‐bonded structure . Furthermore, ag‐C 3 N 4 had a relatively large surface size (918 nm) and a triazine‐rich structure.…”
Section: Resultsmentioning
confidence: 99%
“…Several works have focused on the relation between the material physical properties and the different amounts and distribution of sp 2 and sp 3 hybridized carbon into the matrix. [1][2][3][4][5][6][7][8][9][10] Other researches focused on how to produce a matrix with some specific characteristic, usually for a well defined application, such as high hardness, chemical inertness, low friction coefficient and low electron affinity. [11][12][13][14][15][16] Today, it is well known which technique is appropriate to produce amorphous carbon films with some specific characteristic.…”
Section: Introductionmentioning
confidence: 99%
“…The dashed line displays the simulation results assuming the material parameters of Si and a-C under equilibrium conditions as reported in literature. 9,[16][17][18][19][20] From this simulation, a time constant of about 3 ns is predicted for the film thickness and density relaxation. Experimentally, the thin film relaxation process is found to be about a factor 2 faster.…”
mentioning
confidence: 95%