2012
DOI: 10.1109/ted.2011.2172794
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Thermal Expansion Coefficient Considerations on Field-Effect Mobility of Pentacene Organic Thin-Film Transistors With an AlN Gate Dielectric

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Cited by 3 publications
(2 citation statements)
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“…The difference in the coefficients of thermal expansion for organic and inorganic materials often vary by an order of magnitude or more, and have been reported to affect electronic properties of the organic materials. 37,38 As a result, it is likely that an anisotropic strain field is created in the nanowire structures due to the continuous contact with the SiO2 substrate along the nanowire axis and the ability for the nanowires to relax along the radial direction due to the presence of the grooves. This phenomenology, along with successful fitting using Eq.…”
mentioning
confidence: 99%
“…The difference in the coefficients of thermal expansion for organic and inorganic materials often vary by an order of magnitude or more, and have been reported to affect electronic properties of the organic materials. 37,38 As a result, it is likely that an anisotropic strain field is created in the nanowire structures due to the continuous contact with the SiO2 substrate along the nanowire axis and the ability for the nanowires to relax along the radial direction due to the presence of the grooves. This phenomenology, along with successful fitting using Eq.…”
mentioning
confidence: 99%
“…1393-1401 Thermal Expansion Coefficient Considerations on Field-Effect Mobility of Pentacene Organic Thin-Film Transistors With an AlN Gate Dielectric. Wang, W.-C., +, TED Jan. 2012 1970-1973 …”
mentioning
confidence: 99%