Vanadium tetracyanoethylene (V[TCNE]x) is an organic-based ferrimagnet that exhibits robust magnetic ordering (TC of over 600 K), high quality-factor (high-Q) microwave resonance (Q up to 3500), and compatibility with a wide variety of substrates and encapsulation technologies. Here, we substantially expand the potential scope and impact of this emerging material by demonstrating the ability to produce engineered nanostructures with tailored magnetic anisotropy that serve as a platform for the exploration of cavity magnonics, revealing strongly coupled quantum confined standing wave modes that can be tuned into and out of resonance with an applied magnetic field. Specifically, time-domain micromagnetic simulations of these nanostructures faithfully reproduce the experimentally measured spectra, including the quasiuniform mode and higher-order spin-wave (magnon) modes. Finally, when the two dominant magnon modes present in the spectra are brought into resonance by varying the orientation of the in-plane magnetic field, we observe anticrossing behavior, indicating strong coherent coupling between these two magnon modes at room temperature. These results position V[TCNE]x as a leading candidate for the development of coherent magnonics, with potential applications ranging from microwave electronics to quantum information.
We investigate electron spin relaxation in GaAs in the proximity of a Fe/MgO layer using spinresolved optical pump-probe spectroscopy, revealing a strong dependence of the spin relaxation time on the strength of an exchange-driven hyperfine field. The temperature dependence of this effect reveals a strong correlation with carrier freeze out, implying that at low temperatures the free carrier spin lifetime is dominated by inhomogeneity in the local hyperfine field due to carrier localization. This result resolves a long-standing and contentious question of the origin of the spin relaxation in GaAs at low temperature when a magnetic field is present. Further, this improved fundamental understanding paves the way for future experiments exploring the time-dependent exchange interaction at the ferromagnet/semiconductor interface and its impact on spin dissipation and transport in the regime of dynamically-driven spin pumping.
Integrating patterned, low-loss magnetic materials into microwave devices and circuits presents many challenges due to the specific conditions that are required to grow ferrite materials, driving the need for flip-chip and other indirect fabrication techniques. The low-loss (α = (3.98 ± 0.22) × 10 −5 ), room-temperature ferrimagnetic coordination compound vanadium tetracyanoethylene (V[TCNE] x ) is a promising new material for these applications that is potentially compatible with semiconductor processing. Here we present the deposition, patterning, and characterization of V[TCNE] x thin films with lateral dimensions ranging from 1 micron to several millimeters. We employ electron-beam lithography and liftoff using an aluminum encapsulated poly(methyl methacrylate), poly(methyl methacrylate-methacrylic acid) copolymer bilayer (PMMA/P(MMA-MAA)) on sapphire and silicon. This process can be trivially extended to other common semiconductor substrates. Films patterned via this method maintain low-loss characteristics down to 25 microns with only a factor of 2 increase down to 5 microns. A rich structure of thickness and radially confined spin-wave modes reveals the quality of the patterned films. Further fitting, simulation, and analytic analysis provides an exchange stiffness, A ex = (2.2 ± 0.5) × 10 −10 erg/cm, as well as insights into the mode character and surface spin pinning. Below a micron, the deposition is non-conformal, which leads to interesting and potentially useful changes in morphology. This work establishes the versatility of V[TCNE] x for applications requiring highly coherent magnetic excitations ranging from microwave communication to quantum information. arXiv:1910.05325v1 [physics.app-ph]
Over the past decade, it has become apparent that the extreme sensitivity of 2D crystals to surface interactions presents a unique opportunity to tune material properties through surface functionalization and the mechanical assembly of 2D heterostructures. However, this opportunity carries with it a concurrent challenge: an enhanced sensitivity to surface contamination introduced by standard patterning techniques that is exacerbated by the difficulty in cleaning these atomically thin materials. Here, we report a templated MoS2 growth technique wherein Mo is deposited onto atomically stepped sapphire substrates through a SiN stencil with feature sizes down to 100 nm and subsequently sulfurized at high temperature. These films have a quality comparable to the best MoS2 prepared by other methodologies, and the thickness of the resulting MoS2 patterns can be tuned layer-by-layer by controlling the initial Mo deposition. The quality and thickness of the films are confirmed by scanning electron, scanning tunneling, and atomic force microscopies; Raman, photoluminescence, and x-ray photoelectron spectroscopies; and electron transport measurements. This approach critically enables the creation of patterned, single-layer MoS2 films with pristine surfaces suitable for subsequent modification via functionalization and mechanical stacking. Further, we anticipate that this growth technique should be broadly applicable within the family of transition metal dichalcogenides.
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