Thermal evolution of the morphology, structure, and optical properties of multilayer nanoperiodic systems produced by the vacuum evaporation of SiO and SiO2

Ershov, A. V.; Chugrov, I. A.; Tetelbaum, D. I.; Машин, А. И.; Павлов, Д. А.; Нежданов, А. В.; Bobrov, A. I.; Grachev, D. A.

doi:10.1134/s1063782613040064

Cited by 15 publications

(11 citation statements)

References 17 publications

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“…For instance, by using the PL peak obtained under excitation at 5.82 eV, from (1) we can roughly estimate

\overset{d}{true}

: 3.9 nm for the sample 2, 4.1 nm for the sample 3, 4.5 nm for the sample 4. We note that

\overline{d} \approx 4.1

nm related to sample 3 falls within the size distribution measured by TEM (). On the other hand, the gaussian lineshape is consistent with the inhomogeneous broadening of a PL emitted from an ensemble of size distributed Si‐nc ().…”

Section: Discussionsupporting

confidence: 84%

“…The annealing at 1100

^{\circ}

C of SiO

_{x}

/SiO

_{2}

multilayers produces Si‐nc by phase separation of Si and SiO

_{2}

. This process induces the growth of a luminescence around 1.6–1.7 eV which is characteristic of both porous Si () and Si‐nc produced by different methods (plasma synthesis or colloidal chemistry) ().…”

Section: Discussionmentioning

confidence: 99%

“…TEM measurements were performed on the sample 3 to check the formation of Si‐nc. As reported in the work (), the distribution of Si‐nc diameters was derived by statistical processing of the TEM images: it is accounted for by a Gaussian function centered at 3.5

\pm

0.4 nm with a full width at half maximum (FWHM) of 3.8

\pm

0.8 nm.…”

Section: Experimental Methodsmentioning

confidence: 99%

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Photoluminescence of Si nanocrystals embedded in : Excitation/emission mapping

Vaccaro

Spallino

Zatsepin

et al. 2014

Physica Status Solidi (b)

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Time‐resolved photoluminescence from Si nanocrystals produced by 1100∘C thermal annealing of SiOx/SiO2 multilayers were investigated by tunable laser excitation, achieving a detailed excitation/emission pattern in the visible and UV range. The emission lineshape is a gaussian curve inhomogenously broadened because of the size distribution of Si nanocrystals, the excitation spectrum consists of the overlap of two gaussian bands centered around 3.4 and 5.1 eV. The mapping of luminescence spectral components with the lifetime points out the energy cubic dependence of the spontaneous emission rate. These findings are interpreted on the basis of models proposed in literature that associate this luminescence with quantum confinement of excitons or interfacial Si/SiO2 defects.

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“…For instance, by using the PL peak obtained under excitation at 5.82 eV, from (1) we can roughly estimate

\overset{d}{true}

: 3.9 nm for the sample 2, 4.1 nm for the sample 3, 4.5 nm for the sample 4. We note that

\overline{d} \approx 4.1

Section: Discussionsupporting

confidence: 84%

“…The annealing at 1100

^{\circ}

C of SiO

_{x}

/SiO

_{2}

multilayers produces Si‐nc by phase separation of Si and SiO

_{2}

Section: Discussionmentioning

confidence: 99%

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Photoluminescence of Si nanocrystals embedded in : Excitation/emission mapping

Vaccaro

Spallino

Zatsepin

et al. 2014

Physica Status Solidi (b)

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“…Another convenient method is the thermal synthesis of quantum dots. As shown in [22][23][24], the synthesis of silicon QDs in the suboxide matrix takes place according to a reaction, which, depending on the temperature and duration of annealing, can be stopped at any intermediate stage: 2SiO X ! Si QD + SiO 2 .…”

Section: Thermal and Ion Beam Formation Quantum Dotsmentioning

confidence: 99%

Temperature Effects in the Photoluminescence of Semiconductor Quantum Dots

Zatsepin¹,

Biryukov²

2020

Quantum Dots - Fundamental and Applications

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Temperature effects in the exciton photoluminescence specific to semiconductor quantum dots (QDs) are reviewed using Si QDs as an example. The processes of direct and indirect optical excitation of spatially confined excitons in quantum dots embedded in dielectric matrix are analyzed. The temperature behavior of the quantum dots photoluminescence (PL) excited by various methods was described in detail by a generalized electronic transitions scheme using different exciton relaxation models. The different types of temperature dependences were analyzed. The analytical expressions were obtained for their description, which allow one to determine the energy and kinetic characteristics of QD photoluminescence. It was found that the shape of the temperature dependence makes it possible to understand whether the process of exciton relaxation contains several different thermally activated stages or this is a simple one-stage process. The applicability of the obtained expressions for the analysis of the luminescence properties of quantum dots is demonstrated by the example of crystalline and amorphous silicon nanoclusters in silica matrix. It has been established that the quantum confinement effect of excitons in quantum dots leads to a decrease in the frequency characteristics and thermal activation barriers for nonradiative transitions.Keywords: quantum dots, exciton photoluminescence, temperature dependence of luminescence, quantum confinement effects, ion implantation, mechanisms of excitation and relaxation 2 Quantum Dots -Fundamental and Applications Temperature Effects in the Photoluminescence of Semiconductor Quantum Dots DOI: http://dx.doi.org/10.5772/intechopen.91888 Quantum Dots -Fundamental and Applications Temperature Effects in the Photoluminescence of Semiconductor Quantum Dots DOI: http://dx.doi.org/10.5772/intechopen.91888 Temperature Effects in the Photoluminescence of Semiconductor Quantum Dots

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“…In this work, Si and Ge NCs have been obtained by annealing of nanoperiodic multilayer sandwich SiO x /oxide and GeO x /oxide structures , which makes possible precise control of the nanocrystal size and density . The main purpose of the work was the formation of the resonator structures comprised of two distributed Bragg reflectors and a composite material containing Si or Ge NCs, and the study of their luminescent properties.…”

Section: Introductionmentioning

confidence: 99%

Si and Ge nanocrystals in resonator multilayer structures

Grachev

Ershov

Belolipetsky³

et al. 2016

Physica Status Solidi (a)

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We have produced optical planar resonators with an oxide layer (SiO 2 , Al 2 O 3 , ZrO 2 , HfO 2 ) containing Ge or Si nanocrystals as an active medium, which was placed between two Bragg mirrors. Samples have been obtained by vacuum physical deposition on silicon substrates and subsequent annealing of the active medium. Stationary and nanosecond time-resolved photoluminescence spectra have been measured in the range of 1.4-2.5 eV at room temperature. We have observed strong enhancement of the photoluminescence signal by 5 and 100 times for the Si and Ge nanocrystals placed in the microcavities at 1.7 and 1.8 eV, respectively. This was accompanied by a significant reduction of the photoluminescence decay time which is a proof of the Purcell effect. It has been found out that the oxide environment weakly affects the optical features of the resonators.

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Thermal evolution of the morphology, structure, and optical properties of multilayer nanoperiodic systems produced by the vacuum evaporation of SiO and SiO2

Cited by 15 publications

References 17 publications

Photoluminescence of Si nanocrystals embedded in : Excitation/emission mapping

Photoluminescence of Si nanocrystals embedded in : Excitation/emission mapping

Temperature Effects in the Photoluminescence of Semiconductor Quantum Dots

Si and Ge nanocrystals in resonator multilayer structures

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