Thermal evolution of surface blistering and exfoliation due to ion-implanted hydrogen monomers into Si〈111〉

Liang, Jenq–Horng; Hu, Chi‐Chang; Bai, Chuanyi; Chao, Der-Sheng; Lin, Chih‐Ming

doi:10.1016/j.physb.2011.09.005

Cited by 5 publications

(6 citation statements)

References 15 publications

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“…These phenomena are very similar to those resulting from hydrogen-implanted silicon found in our previous study. 15 thickness of germanium cleavage correlates closely to the location of hydrogen-trapping and oxygen-gettering concentration peaks, but is greater than the position of the hydrogen concentration peak.…”

Section: Resultsmentioning

confidence: 94%

“…These phenomena are very similar to those resulting from hydrogen-implanted silicon found in our previous study. 15 It can thus be concluded that the Table I thickness of germanium cleavage correlates closely to the location of hydrogen-trapping and oxygen-gettering concentration peaks, but is greater than the position of the hydrogen concentration peak. In order to quantitatively analyze the phenomena of surface blistering and exfoliation on the as-annealed hydrogen-implanted germanium surface, the OM-observed images were used to estimate the average number density (N), diameter (d), and covered-area fraction (f) of the optically-detectable blisters and craters in the specimens of 1 × 1 cm 2 .…”

Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 99%

“…In order to easily assess the thermal budget required for successful layer transfer, a simple model was adopted in this study to determine blistering effectiveness at various post-annealing temperatures 15 using the formula, f = f o e −tc/ta [1] where f represents the measured covered-area fraction of the opticallydetectable blisters or craters, f o denotes the fitting coefficient, t a rep- resents the post-annealing time, and t c denotes the characteristic time, a useful criterion for measuring the growth rate of blisters and craters. The characteristic times of the blisters and craters at 410 • C and 475 • C can thus be obtained according to fitting curves, as shown in Fig.…”

Section: Quantitative Analysis Of Optically-detectable Blisters Andmentioning

confidence: 99%

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Thermal Evolution of Surface Blistering and Exfoliation in Hydrogen-Implanted Germanium with Post-Annealing Treatments

Chien

Chao

Liang

et al. 2012

ECS J. Solid State Sci. Technol.

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Hydrogen-induced surface blistering and exfoliation have become more useful index in assessing the mechanisms involved in the process of layer transfer in various semiconductor materials. This study focused specifically on determining the behaviors of germanium blistering and exfoliation induced by hydrogen molecular ion implantation. Germanium substrates were implanted with 200 keV H 2 + ions to a fluence of 2.5 × 10 16 ions/cm 2 before undergoing furnace annealing (FA) treatments. Quantitative analysis using optical microscopy (OM) revealed a thermal evolution of optically-detectable blisters and craters, suggesting an optimal condition of 410 • C, 1 hr. The mechanisms involved in the development of hydrogen blisters in germanium were also evidenced by hydrogen redistribution and microstructure evolution caused by thermal annealing. The measured effective activation energy levels necessary for blister and crater formation showed a noticeable increase in magnitude as compared to the previous result, which may be attributed to dose-dependent activation energy. Furthermore, in order to determine the effectiveness of the layer-splitting process at various post-annealing temperatures, characteristic time was defined based on the time evolution of the covered-area fraction of blisters and craters. The results indicated that a higher post-annealing temperature corresponds to a shorter characteristic time.Silicon-on-insulator (SOI) materials have been extensively developed and applied to integrated circuit (IC) industries due to their ability to alleviate inherent characteristic deficiencies in conventional devices built using bulk-silicon, such as parasitic junction capacitance, high threshold voltage and leakage current, latch-up failure, a soft error rate, etc. 1-3 In recent years, several fabrication techniques, such as zone-melting recrystallization (ZMR), epitaxial lateral overgrowth (ELO), separation by implantation of oxygen (SIMOX), bond-andetch-back silicon-on-insulator (BESOI), and epitaxial layer transfer (Eltran), 4 have been utilized in preparing SOI wafers. Among these, smart-cut technology is regarded as one of the most preferable and efficient techniques due to its superior features of great adjustability in silicon and buried oxide thickness, good uniformity in thickness, low defect density, high surface quality, and better electrical properties. 5 Due to its distinctive advantage of having more enhanced carrier mobility than SOI, germanium-on-insulator (GeOI) has recently been considered the most promising material in terms of high-performance and low-power semiconductor devices beyond the sub-40 nm technology node. 6 Similar to SOI wafers, smart-cut technology is also believed to be the best method to prepare GeOI wafers. 7 Basically, smart-cut technology involves hydrogen implantation and wafer bonding followed by a thermally-controlled layer transfer of crystalline material. In particular, hydrogen-induced surface blistering and exfoliation have been found to be closely related to layer-splitting ...

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Section: Resultsmentioning

confidence: 94%

Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 99%

Section: Quantitative Analysis Of Optically-detectable Blisters Andmentioning

confidence: 99%

See 2 more Smart Citations

Thermal Evolution of Surface Blistering and Exfoliation in Hydrogen-Implanted Germanium with Post-Annealing Treatments

Chien

Chao

Liang

et al. 2012

ECS J. Solid State Sci. Technol.

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“…The selection of appropriate annealing/exposure temperature is important for the process optimization in thin layer transfer techniques both for standard ion implantation and strained-layer driven layer detachment [11][12][13][14][15][16][17][18][19][20][21] . Localization of either hydrogen or stabilized vacancy complexes (depending on the specifics of the strain states) at interfaces in layered materials is a commonly observed phenomenon.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependencies of hydrogen-induced blistering of thin film multilayers

Kuznetsov

Gleeson

Bijkerk

2014

Journal of Applied Physics

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We report on the influence of sample temperature on the development of hydrogen-induced blisters in Mo/Si thin-film multilayers. In general, the areal number density of blisters decreases with increasing exposure temperature, whereas individual blister size increases with exposure temperatures up to ~200 °C but decreases thereafter. Comparison as a function of sample temperature is made between exposures to a flux containing both hydrogen ions and neutrals and one containing only neutrals. In the case of the neutral-only flux, blistering is observed for exposure temperatures ≥90 °C. The inclusion of ions promotes blister formation at <90 °C, while retarding their growth at higher temperatures. In general, ioninduced effects become less evident with increasing exposure temperature. At 200 °C the main effect discernable is reduced blister size as compared with the equivalent neutral-only exposure. The temperature during exposure is a much stronger determinant of the blistering outcome than either pre-or post-annealing of the sample. The trends observed for neutralonly exposures are attributed to competing effects of defect density thermal equilibration and H-atom induced modification of the Si layers. Energetic ions modify the blistering via (temperature dependent) enhancement of H-mobility and re-crystallization of amorphous Si.

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Dependence of implantation sequence on surface blistering characteristics due to H and He ions co-implanted in silicon

Liang

Hsieh

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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Thermal evolution of surface blistering and exfoliation due to ion-implanted hydrogen monomers into Si〈111〉

Cited by 5 publications

References 15 publications

Thermal Evolution of Surface Blistering and Exfoliation in Hydrogen-Implanted Germanium with Post-Annealing Treatments

Thermal Evolution of Surface Blistering and Exfoliation in Hydrogen-Implanted Germanium with Post-Annealing Treatments

Temperature dependencies of hydrogen-induced blistering of thin film multilayers

Dependence of implantation sequence on surface blistering characteristics due to H and He ions co-implanted in silicon

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