1989
DOI: 10.1016/0020-0891(89)90113-9
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Thermal emission of semiconductors under nonequilibrium conditions

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Cited by 14 publications
(9 citation statements)
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“…Besides, the location of the absolute radiation peaks for curves 2, 3 is somewhat shifted in the λ scale, though both curves correspond to the same temperature T = 340 K. These features, theoretically predicted in this work, have been observed earlier [11] for different samples in the radiation spectra for free charge carriers in semiconductors with no high-quality plane-parallel plates.…”
supporting
confidence: 79%
“…Besides, the location of the absolute radiation peaks for curves 2, 3 is somewhat shifted in the λ scale, though both curves correspond to the same temperature T = 340 K. These features, theoretically predicted in this work, have been observed earlier [11] for different samples in the radiation spectra for free charge carriers in semiconductors with no high-quality plane-parallel plates.…”
supporting
confidence: 79%
“…One may also employ all-optical modulation of the emissivity via photocarrier doping. For example, optical pumping of silicon has been used to achieve pulsed TE, with the speed limited by the ~200 µs free-carrier lifetime 75 . A recent work demonstrated nanosecond modulation of emissivity of a gallium-arsenide (GaAs) surface, enabled by the much-shorter free-carrier lifetime in GaAs compared to silicon 76 .…”
Section: Tunable Thermal Emissionmentioning
confidence: 99%
“…Here E g is the energy of the semiconductor forbidden gap. In the first case positive (PL) and negative (NL) luminescence [5][6][7] were investigated, while in the second case thermal emission (TE) of the nonequilibrium charge carriers was studied [8][9][10]. The unit base thickness d = 3.9 mm was comparable to L d .…”
Section: Methodsmentioning
confidence: 99%