Thermal emission, electrical conductivity, and hall effect for defects study at high temperature (T ⩾ 1250°K) in refractory oxides (Y2O3, TiO2)

Odier, P.; Baumard, Jean‐François; Panis, D.; Anthony, A.M.

doi:10.1016/0022-4596(75)90333-3

Cited by 30 publications

(39 citation statements)

References 4 publications

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“…The effect of oxygen activity on the activation energy of the electrical conductivity for undoped (but not necessarily pure) TiO 2 is shown in Fig. 1 [21][22][23][24]. As seen, these data exhibit a large scatter that may be related to the following effects:…”

Section: Brief Overview Of Literature Datamentioning

confidence: 90%

“…There has been an accumulation of data indicating that the activation energy of electrical conductivity for oxides, including TiO 2 , depends substantially on oxygen activity [21][22][23][24]. These data are shown in Fig.…”

Section: Introductionmentioning

confidence: 92%

“…There has been an accumulation of the electrical conductivity data for TiO 2 [21][22][23][24][28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43]. The effect of oxygen activity on the activation energy of the electrical conductivity for undoped (but not necessarily pure) TiO 2 is shown in Fig.…”

Section: Brief Overview Of Literature Datamentioning

confidence: 99%

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Electrical properties of TiO2: equilibrium vs dynamic electrical conductivity

Бак

Nowotny

Stranger

2010

Ionics

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The present work reports semiconducting properties of high purity TiO 2 determined in the gas/solid equilibrium, as well as during controlled heating and cooling in the range 300-1,273 K. The activation energy of the electrical conductivity is considered in terms of the activation enthalpy of the formation of ionic defects and the activation enthalpy of the mobility of electronic defects. These data, determined from the dynamic electrical conductivity experiments, are compared to the electrical conductivity data determined in equilibrium. It is shown that only the equilibrium electrical conductivity data for high-purity TiO 2 are well defined. It is shown that the activation energy of the electrical conductivity determined in equilibrium differs substantially from that for the dynamic electrical conductivity data during cooling and heating. It is concluded that the formation enthalpy term determined from the dynamic conductivity data is determined by the heating/cooling rate rather than materials' properties.

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Section: Brief Overview Of Literature Datamentioning

confidence: 90%

Section: Introductionmentioning

confidence: 92%

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Electrical properties of TiO2: equilibrium vs dynamic electrical conductivity

Бак

Nowotny

Stranger

2010

Ionics

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“…Therefore, concentration of oxygen vacancies is a controlling factor in this type of gas sensor. Odier and Boumard [30] suggested that at higher oxygen partial pressures, e.g. in air, yttrium substitution defects in TiO 2 will control the electrical properties.…”

Section: Influence Of Yttrium Dopingmentioning

confidence: 99%

Citrate–nitrate synthesis of nano-structured titanium dioxide ceramics for gas sensors

Seeley

Choi

Bose

2009

Sensors and Actuators B: Chemical

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“…It has been proposed (Odier, Baumard, Panis & Anthony, 1975;Bianchin et al, 1980) that the nonstoichiometry 8 is accommodated (at least at temperatures in the range with which we are concerned here) by additional, 'interstitial' Ti atoms (not by a deficit in the O array). Bursill & Blanchin (1983) have proposed an elegant structural model for accommodating these extra Ti atoms which avoids the (structurally and energetically) unacceptable aspects of a simple interstitial Ti atom.…”

Section: Two Types Of Rutile-related Crystallographic-shear Phasesmentioning

confidence: 99%

A high-resolution electron microscopy study of disorder in two types of rutile-related crystallographic-shear phases

Otero-Dı́az¹,

Hyde²

1984

Acta Crystallogr Sect B

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A. YAMAMOTO, H. NAKAZAWA, M. KITAMURA AND N. MORIMOTO 237 F/,. Then the structure factor is given by Fh = F~, [I +exp 7ri(h, +h2 +h3) +exp "a'i(h, +h2 -t-h4) + exp 7ri(h 3 + h4) ].(A 10)Here the second, third and fourth terms correspond to the contribution from the summation over the elements of three cosets (El½, '~,~,1 0)G0, (E~,J, 0,~)Go ~)Go. The last factor in (AI0) gives the and (El0, 0, ~, extinction rules hl + h2 + h3 = 2n, h~ + h2 + ha = 2n, h 3 -tha=2n and for the reflections which fulfill these conditions, this takes 4. Therefore the structure factor is calculated only by taking into account the symmetry operator in Go. This is analogous to the situation in the usual three-dimensional centered lattice. KITAMURA, M. & MOR1MOTO, N. (1975 References AbstractTwo specimens were studied: rutile that had been melted in an argon-arc furnace, and therefore slightly reduced, and a V203-doped TiO2 of nominal composition (V, Ti)O-i.875 which had been quenched from 1873 K. Both were examined at the atomic-resolution level. The former contained only a few areas with crystallographic-shear planes, and these were roughly parallel to (132)r, and appeared quite "thick" in projection along [1]1], (The subscript r indicates the rutile

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Thermal emission, electrical conductivity, and hall effect for defects study at high temperature (T ⩾ 1250°K) in refractory oxides (Y2O3, TiO2)

Cited by 30 publications

References 4 publications

Electrical properties of TiO2: equilibrium vs dynamic electrical conductivity

Electrical properties of TiO2: equilibrium vs dynamic electrical conductivity

Citrate–nitrate synthesis of nano-structured titanium dioxide ceramics for gas sensors

A high-resolution electron microscopy study of disorder in two types of rutile-related crystallographic-shear phases

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