Thermal desorption spectroscopy from the surfaces of metal-oxide-semiconductor nanostructures

Meyburg, Jan Philipp; Nedrygailov, Ievgen I.; Hasselbrink, Eckart; Diesing, Detlef

doi:10.1063/1.4896979

Cited by 8 publications

(3 citation statements)

References 23 publications

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“…Optical measurements are hampered by the fact that such thin metal films are optically partially transparent. Indirect ways to measure this temperature have been explored, 82,83 but they must not conflict with recording the chemicurrent.…”

Section: Discussionmentioning

confidence: 99%

Chemical energy dissipation at surfaces under UHV and high pressure conditions studied using metal–insulator–metal and similar devices

Diesing

Hasselbrink

2016

Chem. Soc. Rev.

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Metal heterostructures have been used in recent years to gain insights into the relevance of energy dissipation into electronic degrees of freedom in surface chemistry. Non-adiabaticity in the surface chemistry results in the creation of electron-hole pairs, the number and energetic distribution of which need to be studied in detail. Several types of devices, such as metal-insulator-metal, metal-semiconductor and metal-semiconductor oxide-semiconductor, have been used. These devices operate by spatially separating the electrons from the holes, as an internal barrier allows only - or at least favours - transport from the top to the back electrode for one kind of carrier. An introduction into the matter, a survey of the literature and a critical discussion of the state of research is attempted.

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Section: Discussionmentioning

confidence: 99%

Chemical energy dissipation at surfaces under UHV and high pressure conditions studied using metal–insulator–metal and similar devices

Diesing

Hasselbrink

2016

Chem. Soc. Rev.

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“…Surfaces treatment of metals can be carried out by different conventional methods namely, physical, chemical, mechanical, physicochemical and chemi-thermal methods [12]. In mechanical treatment, contamination removal is achieved by mechanical wiping, scraping, milling, exposure to air or water jet, physical treatment mechanism consists in dissolution of contaminants with the help of various solvents and in their subsequent removal from the work-piece surface [13,14], Intensification of the treatment process is achieved by placing of ultrasonic vibration into the treatment area [15], physicochemical treatment consist in dissolution, emulsification and chemical destruction of contaminations, chemi-thermal method consists in chemical destruction of contaminations in flame or in alkaline melt at high temperatures (400-450 o C) and mechanical treatment efficiency can be improved by optimization of alkaline melt composition and process automation [16,17].…”

Section: Importance Of Plasma Treatment Of Surfacesmentioning

confidence: 99%

Treatment of Metal and Textile Fabrics Surfaces Using Plasma

Mansour

Elshafei

2020

AJARR

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In the next few years, the progresses in plasma technology will play an increasing role in our lives, providing new sources of energy. The studies conducted by scientists on plasma state not only accelerate technological developments, but also describe the characteristics and types of plasmas and improve the understanding of natural phenomena. Plasmas represent the recent fourth state of matter in addition to the three fundamental states namely solids, liquids and gases. Plasma is defined as a state of matter where the gas phase is energized until atomic electrons are no longer associated with any particular atomic nucleus or as a matter that exists as a mixture of neutral atoms, ions, electrons, molecular ions and molecules present in excited and ground states. Plasma is the result of the ionization of atoms and the level of ionization is mainly controlled by temperature, where an increase of temperature increases the degree of ionization. The term “plasma” introduced by the scientist Irving Langmuir (1928) and comes from a Greek word that means moldable or Jelly material. Plasma may be produced by either heating a gas at high temperature until it is ionized or by subjecting it to a strong electric or magnetic fields. Investigators categorized plasma as non-thermal and thermal plasma. In non-thermal plasma, the electrons are at a much higher temperature than the ions and neutral particles however, in thermal plasma, the electrons and heavier particles are in thermal equilibrium at the same temperature. Plasma treatment of surfaces is initiated when electrons, molecules or neutral gas atoms, positive ions, ions along with excited gas molecules and atoms come together and interact with a particular surface. Plasma treatments can be utilized to develop thin protective layers to metal surfaces, as surface pretreatment and cleaning are the most important operations of coating technologies, in addition to induce both surface modifications and bulk property enhancements of textile materials.

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“…[13][14][15][16][17] An etched wafer sample was placed in an evacuated reactor, and XeF 2 gas was introduced to the reactor for 30 s while the pressure was gradually increased to about 133 Pa. During this procedure, the sidewall with a thin film with poor etch tolerance could be etched by F atoms. Thermal desorption spectroscopy (TDS) 18,19) was also carried out on etched samples to evaluate the amount of F-and Br-containing species in the sidewall film deposited during etching.…”

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confidence: 99%

Effect of substrate temperature on sidewall erosion in high-aspect-ratio Si hole etching employing HBr/SF₆/O₂ plasma

Sakai

Yahashi

Shimonishi

et al. 2018

Jpn. J. Appl. Phys.

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A Si deep-trench etching process using HBr/SF6/O2 plasma was studied. It was found that when the hole trench width was decreased from 190 to 140 nm, erosions at the topmost part of the Si hole sidewall were observed at an incidence of 10 ppm, which was checked from top-down views of 928 million hole shapes per wafer. It was confirmed that when the cathode temperature was increased to 140 °C, no Si erosion occurred. It was found that etching at a higher temperature reduced the halogen content in the film deposited on the sidewall, making the film more protective, and suppressed Si erosion.

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Thermal desorption spectroscopy from the surfaces of metal-oxide-semiconductor nanostructures

Cited by 8 publications

References 23 publications

Chemical energy dissipation at surfaces under UHV and high pressure conditions studied using metal–insulator–metal and similar devices

Chemical energy dissipation at surfaces under UHV and high pressure conditions studied using metal–insulator–metal and similar devices

Treatment of Metal and Textile Fabrics Surfaces Using Plasma

Effect of substrate temperature on sidewall erosion in high-aspect-ratio Si hole etching employing HBr/SF₆/O₂ plasma

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Thermal desorption spectroscopy from the surfaces of metal-oxide-semiconductor nanostructures

Cited by 8 publications

References 23 publications

Chemical energy dissipation at surfaces under UHV and high pressure conditions studied using metal–insulator–metal and similar devices

Chemical energy dissipation at surfaces under UHV and high pressure conditions studied using metal–insulator–metal and similar devices

Treatment of Metal and Textile Fabrics Surfaces Using Plasma

Effect of substrate temperature on sidewall erosion in high-aspect-ratio Si hole etching employing HBr/SF6/O2 plasma

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Effect of substrate temperature on sidewall erosion in high-aspect-ratio Si hole etching employing HBr/SF₆/O₂ plasma