2017
DOI: 10.1201/9781420042368
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Thermal Design of Electronic Equipment

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Cited by 53 publications
(10 citation statements)
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“…where ∆P im and ∆P om are the pressure loss at the inlet/outlet manifolds due to the cross-sectional area change, while ∆P c and ∆P e are pressure loss caused by the abrupt contraction and expansion at the inlet/outlet of microchannel, respectively. ∆P im , ∆P om , ∆P c and ∆P e could be obtained according to the following equations [19,20]:…”
Section: Hydraulic Performancementioning
confidence: 99%
“…where ∆P im and ∆P om are the pressure loss at the inlet/outlet manifolds due to the cross-sectional area change, while ∆P c and ∆P e are pressure loss caused by the abrupt contraction and expansion at the inlet/outlet of microchannel, respectively. ∆P im , ∆P om , ∆P c and ∆P e could be obtained according to the following equations [19,20]:…”
Section: Hydraulic Performancementioning
confidence: 99%
“…The junction temperature is important to find thermal resistivity and conductivity, which is finalized the output current in output node at maximum temperature. According to Remsburg (2001), the layout temperature is varying with feature size corresponding 100-120°C. In BSIM4 analysis, temperature varied from -40-120°C.…”
Section: Thermal Effect In Cordic Cellmentioning
confidence: 99%
“…Self‐heating effect as the major problem of HEMTs, not only imposes constraints on electrical performances and linearity but it degrades the device lifetime . Consequently, these kinds of transistors require sophisticated thermal management to improve the output power …”
Section: Introductionmentioning
confidence: 99%
“…4 Consequently, these kinds of transistors require sophisticated thermal management to improve the output power. [5][6][7] There are two popular ways to assemble a discrete HEMT on a carrier: wire bonding and flip-chip. The conventional wire-bonding is more common; however, it suffers from several shortcomings such as the wire inductance effects, discontinuities, nonreproducible wire-bonds, and low reliability of interconnects due to the thermo-mechanical stress.…”
Section: Introductionmentioning
confidence: 99%