2015
DOI: 10.1021/am5092159
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Thermal Decomposition of Bismuth Oxysulfide from Photoelectric Bi2O2S to Superconducting Bi4O4S3

Abstract: With the addition of oxygen into the chain-like bismuth sulfide of Bi2S3, there are two interesting functional compounds of Bi2O2S (photoelectric) and Bi4O4S3 (superconducting) containing the PbO-like [Bi2O2] layers. Nanoscale Bi2O2S crystals with an indirect band gap of 1.12 eV are synthesized via a facile hydrothermal method. This semiconductor shows excellent photoelectric response under the irradiation of visible light lamp at room temperature. Theoretical calculations and packing factor model both indicat… Show more

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Cited by 122 publications
(100 citation statements)
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References 35 publications
(63 reference statements)
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“…Our newly developed hydrothermal synthesis efficiently produces nanostructured Bi 2 O 2 S with high phase purity in water. 8 By using alcohol as solvent and excess KOH as mineralizer, a new layered bismuth oxysulfide of Bi 9 O 7.5 S 6 was obtained as well-defined hexagonal plates as shown from the SEM image in Figure 1a. The EDX analysis of selected regions of the sample revealed the presence of Bi, O, and S elements ( Figure S1, Supporting Information), and the average atomic ratio of Bi/S is 3:2 from different crystals.…”
Section: ■ Results and Discussionmentioning
confidence: 97%
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“…Our newly developed hydrothermal synthesis efficiently produces nanostructured Bi 2 O 2 S with high phase purity in water. 8 By using alcohol as solvent and excess KOH as mineralizer, a new layered bismuth oxysulfide of Bi 9 O 7.5 S 6 was obtained as well-defined hexagonal plates as shown from the SEM image in Figure 1a. The EDX analysis of selected regions of the sample revealed the presence of Bi, O, and S elements ( Figure S1, Supporting Information), and the average atomic ratio of Bi/S is 3:2 from different crystals.…”
Section: ■ Results and Discussionmentioning
confidence: 97%
“…Therefore, layered bismuth oxysulfides may be fairly chemically stable and hence be more suitable for solar utilization than BiOCl and Bi 2 S 3 . Recently, Bi 2 O 2 S was demonstrated to be an excellent photoelectric material with E g = 1.12 eV, 8 which is in the optimal band-gap region of 1.0−1.8 eV for solar absorber materials. However, Bi 2 O 2 S is an optically indirect-transition material which may be unable to ensure a high absorption coefficient.…”
Section: ■ Introductionmentioning
confidence: 99%
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“…These band gaps are smaller than those observed in Bi9O7.5S6 (1.27 eV [4])and Bi2O2S (ca. 1.12 eV or 1.5 eV [2,3]), which may be related to the overlap between the Bi 6p and S 3p as well as the contribution of the Bi 6s and S 3s orbitals. …”
Section: Experimental and Computationalmentioning
confidence: 99%
“…[1] Bi2O2S is an oxysulfide semiconductor with an indirect gap of approximately 1.12 eV or 1.5 eV, and shows potential for application as photocatalysts and in electro-optics. [2,3] Bi9O7.5S6 is a semiconductor with a direct band gap of 1.27 eV. [4] MOBiS2 (M: Bi, La), which can also be described as Bi2OS2 and LaOBiS2, are isostructural layered oxysulfides and have been extensively studied because their superconductivity were triggered by substituting F − for O 2− .…”
Section: Introductionmentioning
confidence: 99%