Thermal contact resistance between graphene and silicon dioxide

Abstract

The thermal contact resistance between graphene and silicon dioxide was measured using a differential 3ω method. The sample thicknesses were 1.2 (single-layer graphene), 1.5, 2.8, and 3.0 nm, as determined by atomic force microscopy. All samples exhibited approximately the same temperature trend from 42 to 310 K, with no clear thickness dependence. The contact resistance at room temperature ranges from 5.6×10−9 to 1.2×10−8 m2 K/W, which is significantly lower than previous measurements involving related carbon materials. These results underscore graphene’s potential for applications in microelectronics and thermal management structures.

Continuous-wave laser particle conditioning: Thresholds and time scales

“…Using a 10 µm hemisphere for the model particle, the contact conductance is estimated at 46 kWm −2 K −1 . This value initially seems high in comparison to metal-metal contacts which have a conductance on the order of a few kWm −2 K −1 [9], however the contact conductance of graphene and highly ordered graphite can easily be tens of MWm −2 K −1 [10]. The loose bonding of the graphite with the surface of the optic and the agglomerated nature of the graphite flakes may explain the lower value calculated.…”

Role of Remote Interfacial Phonon (RIP) Scattering in Heat Transport Across Graphene/SiO2 Interfaces

“…15 We thus approximate g RIP  0.02 W m -1 K -1 for heat transfer by RIP scattering in the experiments of Baloch et al 11 To compare these CNT results with our VMTR measurements on graphene interfaces, we 12,13,27 and ~0.004 W m -1 K -1 for the multi-wall CNT interfaces. 15 There are two possible explanations for the different behaviour in graphene and CNTs.…”

Transport in Nanoribbon Interconnects Obtained from Graphene Grown by Chemical Vapor Deposition

“…where k ox = 1.4 Wm -1 K -1 is the thermal conductivity of SiO 2 , R Cox is the thermal resistance of the graphene-SiO 2 interface [40][41][42] , W eff ≈ W + 2t ox is the effective width of the heated region at the SiO 2 /Si interface, and k Si ~ 100 Wm -1 K -1 is the thermal conductivity of the doped Si substrate. We note eq.…”