Thermal conductivity of ultra low-k dielectrics

Delan, Annekatrin; Rennau, M.; Schulz, Stefan E.; Geßner, Thomas

doi:10.1016/s0167-9317(03)00417-9

Cited by 59 publications

(33 citation statements)

References 9 publications

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“…However, polymeric nanofoams tend to have a lower thermal conductivity compared with porous SiO 2 with the same dielectric constant. Indeed, the thermal conductivity of dense polymer is as low as that of typical porous SiO 2 [24]. On the other hand, Baskaran et al [4] reported that surfactant templated mesoporous silica thin films have an elastic modulus satisfying the IC process requirements.…”

Section: Current State Of Knowledgementioning

confidence: 99%

“…Moreover, Jain et al [13] found that the synthesis method for SiO 2 xerogels could affect the thermal conductivity of the film with thickness ranging from 500 nm to 2.5 µm while the porosity varied from 25 to 80% and pore diameter from 1 to 25 nm [13]. Hu et al [14] measured the thermal conductivity at room temperature of 600 nm thick silica xerogels as a function of porosity ranging from 48 to 77% while Delan et al [24] reported the thermal conductivity of SiO 2 aerogel thin films with 55% porosity and film thicknesses equal to 551 and 583 nm. Moreover, Tsui et al [2] reported the in-plane and cross-plane thermal conductivity of spin coated porous silica thin films.…”

Section: Current State Of Knowledgementioning

confidence: 99%

“…The thermal conductivity of XLK between 89 and 400 K was found to be about height times smaller than that of dense SiO 2 [32] and equal to 0.22 W/m.K at room temperature [31]. Delan et al [24] also measured the thermal conductivity of templated mesoporous SiO 2 films at room temperature with thickness equal to 385 and 392 nm and film porosity of 52%. Finally, Choi et al [9] recently measured the thermal conductivity of a single 150 nm thick porous templated mesoporous SiO 2 film with 30% porosity.…”

Section: Current State Of Knowledgementioning

confidence: 99%

“…Pores diameter varied between 5 and 10 nm and observations showed that the effective cross-plane thermal conductivity appeared to be less sensitive to porosity than thickness. The reported experimental data for aerogel [24], xerogel [13,14], Vycor glass [38], templated mesoporous silica [2,24] and nanoporous bismuth [37] were all obtained using the 3ω method [38].…”

Section: Current State Of Knowledgementioning

confidence: 99%

“…Moreover, thermal conductivity measurements reported for templated mesoporous silica thin films were performed on a total of three different films with porosity of 30 and 52% and thermal conductivity of 0.15 to 0.21 W/m.K. Unfortunately, the pore shape, size, and spatial arrangements were unspecified [9,24].…”

Section: Current State Of Knowledgementioning

confidence: 99%

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Thermal conductivity of cubic and hexagonal mesoporous silica thin films

Coquil¹,

Richman²,

Hutchinson³

et al. 2009

Journal of Applied Physics

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This paper reports the cross-plane thermal conductivity of highly ordered cubic and hexagonal templated mesoporous amorphous silica thin films synthesized by evaporation-induced self-assembly process. Cubic and hexagonal films featured spherical and cylindrical pores and average porosity of 25% and 45%, respectively. The pore diameters ranged from 3 to 18 nm and film thickness from 80 to 540 nm while the average wall thickness varied from 3 to 12 nm. The thermal conductivity was measured at room temperature using the 3ω method. The experimental setup and the associated analysis were validated by comparing the thermal conductivity measurements with data reported in the literature for the silicon substrate and for high quality thermal oxide thin films with thicknesses ranging from 100 to 500 nm. The cross-plane thermal conductivity of the synthesized mesoporous silica thin films does not show strong dependence on pore size, wall thickness, or film thickness. This is due to the fact that heat is mainly carried by very localized non propagating vibrational modes. The average thermal conductivity for the cubic mesoporous silica films was 0.30 ± 0.02 W/m.K, while it was 0.20 ± 0.01 W/m.K for the hexagonal films. This corresponds to a reduction of 79% and 86% from bulk fused silica at room temperature.

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Section: Current State Of Knowledgementioning

confidence: 99%

Section: Current State Of Knowledgementioning

confidence: 99%

Section: Current State Of Knowledgementioning

confidence: 99%

Section: Current State Of Knowledgementioning

confidence: 99%

Section: Current State Of Knowledgementioning

confidence: 99%

See 3 more Smart Citations

Thermal conductivity of cubic and hexagonal mesoporous silica thin films

Coquil¹,

Richman²,

Hutchinson³

et al. 2009

Journal of Applied Physics

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Carbon‐Enriched Amorphous Hydrogenated Boron Carbide Films for Very‐Low‐k Interlayer Dielectrics

Nordell

Nguyen

Caruso

et al. 2017

Adv Elect Materials

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A longstanding challenge in ultralarge‐scale integration has been the continued improvement in low‐dielectric‐constant (low‐k) interlayer dielectric materials and other specialized layers in back‐end‐of‐the‐line interconnect fabrication. Modeled after the success of carbon‐containing organosilicate materials, carbon‐enriched amorphous hydrogenated boron carbide (a‐BxC:Hy) films are grown by plasma‐enhanced chemical vapor deposition from ortho‐carborane and methane. These films contain more extraicosahedral sp3 hydrocarbon groups than nonenriched a‐BxC:Hy films, as revealed by FTIR and NMR spectroscopy, and also exhibit lower dielectric constants than their nonenriched counterparts, notably due to low densities combined with a low distortion and orientation contribution to the total polarizability. Films with dielectric constant as low as 2.5 are reported with excellent electrical stability (leakage current of 10−9 A cm−2 at 2 MV cm−1 and breakdown voltage of >6 MV cm−1), good thermal conductivity of 0.31 ± 0.03 W m−1 K−1, and high projected Young's modulus of 12 ± 3 GPa. These properties rival those of leading SiOC:H materials, and position a‐BxC:Hy as an important complement to traditional Si‐based materials to meet the complex needs of next‐generation interconnect fabrication.

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Monolayer AsTe₂: Stable Robust Metal in 2D, 1D and 0D

2018

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The structural, phononic, and electronic properties of the monolayer structures of AsTe are characterized by performing density functional theory (DFT) calculations. Total energy optimization and phonon calculations reveal that single layers of the 2H-AsTe and 1T-AsTe phases form dynamically stable crystal structures. Electronic structure analysis also shows that both 2H and 1T phases have nonmagnetic metallic character. It is also predicted that the metallic nature of the ultra-thin both 2H-AsTe and 1T-AsTe structures remain unchanged even under high biaxial strain values. For further examination of the dimensionality effect in the robust metallicity in 2D AsTe phases, electronic characteristics of 1D nanoribbons and 0D quantum dots are also investigated. It is found that independent from the dimension and crystallographic orientations 0D and 1D structures of 2H- and 1T-AsTe structures have metallic behavior. It is found that single layers of AsTe are quite promising materials for nanodevice applications owing to the robust metallic character.

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Thermal conductivity of ultra low-k dielectrics

Cited by 59 publications

References 9 publications

Thermal conductivity of cubic and hexagonal mesoporous silica thin films

Thermal conductivity of cubic and hexagonal mesoporous silica thin films

Carbon‐Enriched Amorphous Hydrogenated Boron Carbide Films for Very‐Low‐k Interlayer Dielectrics

Monolayer AsTe₂: Stable Robust Metal in 2D, 1D and 0D

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Thermal conductivity of ultra low-k dielectrics

Cited by 59 publications

References 9 publications

Thermal conductivity of cubic and hexagonal mesoporous silica thin films

Thermal conductivity of cubic and hexagonal mesoporous silica thin films

Carbon‐Enriched Amorphous Hydrogenated Boron Carbide Films for Very‐Low‐k Interlayer Dielectrics

Monolayer AsTe2: Stable Robust Metal in 2D, 1D and 0D

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Monolayer AsTe₂: Stable Robust Metal in 2D, 1D and 0D