Thermal conductivity of e-beam coatings

Grilli, Maria Luisa; Ristau, D.; Dieckmann, Manfred; Willamowski, Uwe

doi:10.1007/pl00021094

Cited by 14 publications

(4 citation statements)

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“…323,324 However, substantially reduced values of 0.5-1.7 W/mK have been reported for ALD HfO 2 gate oxide films which exhibit a mixed amorphous/nano-crystalline microstructure. 57,324 Purely amorphous films deposited by molecular beam epitaxy 325 or electron beam evaporation 326,327 exhibit still lower thermal conductivity values of 0.3 and <0.05 W/mK, respectively. In this regard, the value of 4.1 ± 0.6 W/mK observed here for an ALD HfO 2 is remarkable and perhaps the highest value reported to date for HfO 2 .…”

Section: Methodsmentioning

confidence: 99%

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic devices. While electrical, optical, and interfacial properties have been the primary consideration for such devices, thermal and mechanical properties are becoming an additional key consideration for many new and emerging applications of ALD high-k materials in electromechanical, energy storage, and organic light emitting diode devices. Unfortunately, a clear correspondence between thermal/mechanical and electrical/optical properties in ALD high-k materials has yet to be established, and a detailed comparison to conventional silicon-based dielectrics to facilitate optimal material selection is also lacking. In this regard, we have conducted a comprehensive investigation and review of the thermal, mechanical, electrical, optical, and structural properties for a series of prevalent and emerging ALD high-k materials including aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), hafnium oxide (HfO 2 ), and beryllium oxide (BeO). For comparison, more established silicon-based dielectrics were also examined, including thermally grown silicon dioxide (SiO 2 ) and plasma-enhanced chemically vapor deposited hydrogenated silicon nitride (SiN:H). We find that in addition to exhibiting high values of dielectric permittivity and electrical resistance that exceed those of SiO 2 and SiN:H, the ALD high-k materials exhibit equally exceptional thermal and mechanical properties with coefficients of thermal expansion ≤ 6 × 10 -6 / • C, thermal conductivites (κ) of 3-15 W/m K, and Young's modulus and hardness values exceeding 200 and 25 GPa, respectively. In many cases, the observed extreme thermal/mechanical properties correlate with the presence of crystallinity in the ALD high-k films. In contrast, some of the electrical and optical properties correlate more strongly with the percentage of ionic vs. covalent bonds present in the high-k film. Overall, the ALD high-k dielectrics investigated concurrently exhibit compelling thermal/mechanical and electrical/optical properties. The drive to reduce gate leakage currents in highly scaled complementary metal-oxide-semiconductor (CMOS) transistors has led to the exploration and development of a wide variety of high-dielectricconstant (high-k) materials to replace silicon dioxide (SiO 2 ) as the insulating gate dielectric material.1-8 Many of these same high-k materials have found additional applications in future non-CMOS logic and memory storage products such as solid-state electrolytes in resistive switching devices, 9,10 tunnel barriers in spin-transport devices, 11 and as a ferroelectric in magnetoelectric devices. While electrical, physical, and thermodynamic properties have clearly been a key consideration in all of the above applications, thermal properties have become an additional important consideration for higk-k dielectrics as aggressive dimensional scaling of devices has created the need to dissipate ...

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Section: Methodsmentioning

confidence: 99%

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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“…In this measurement, we first confirmed that the obtained thermal conductivity of SiO 2 (0.60 W/mK) film was within the range described in previous reports. 27,29) The thermal conductivity of TaO x thin film was found to fall on increasing its oxygen content, and in Ta 2 O 5À , it is as low as that of Ta 2 O 5 . 27) The thermal conductivity of a CF was assumed to be the same as that of TaO 1:9 film (1.0 W/mK), because its resistivity of 60 mÁcm is close in value to the CF's resistivity in the LRS.…”

Section: Resultsmentioning

confidence: 99%

“…27,29) The thermal conductivity of TaO x thin film was found to fall on increasing its oxygen content, and in Ta 2 O 5À , it is as low as that of Ta 2 O 5 . 27) The thermal conductivity of a CF was assumed to be the same as that of TaO 1:9 film (1.0 W/mK), because its resistivity of 60 mÁcm is close in value to the CF's resistivity in the LRS. Figure 5(b) shows simulated temperature maps during reset and set operations, indicated by circles in Fig.…”

Section: Resultsmentioning

confidence: 99%

Conductive Filament Expansion in TaO_xBipolar Resistive Random Access Memory during Pulse Cycling

Ninomiya

Kawasaki

Muraoka

et al. 2013

Jpn. J. Appl. Phys.

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The post-cycling data retention of filamentary operated resistive random access memory (ReRAM) can be improved by minimizing conductive filament expansion during pulse cycling. We find that filament size gradually grows with increasing pulse cycles due to oxygen diffusion from the region surrounding each filament. To achieve long term use of ReRAM while suppressing filament expansion, the key is to control both electric power and pulse width input during switching. We minimize CF expansion based on this concept and demonstrate long data retention even after 106 pulse switchings under optimized reset conditions.

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“…In our fabrication, the HIDS was developed by using the high-index-contrast materials such as Ta2O5 and polymeric systems [62,63]. We note that the thermal conductivity of Ta2O5 is much lower than that of silica (i.e., ~0.026 W / (m • °C) [64,65]), which could be a reason for the relatively low thermal conductivity of HIDS. Another possible reason is that the thermal conductivity of silica films grown by PECVD (i.e., ~1.0 W / (m • °C) [66]) is slightly lower than the previously mentioned value of silica.…”

Section: Thermal Conductivitymentioning

confidence: 99%

Bistability and Thermal Studies in High Index Doped Silica Integrated Ring Resonators

Moss

2023

Preprint

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The utilization and engineering of thermo-optic effects have found broad applications in integrated photonic devices, facilitating efficient light manipulation to achieve various functionalities. Here, we perform both an experimental characterization and theoretical analysis of these effects in integrated micro-ring resonators in high index doped silica (HIDS), which has had many applications in integrated photonics and nonlinear optics. By fitting the experimental results with theory, we obtain fundamental parameters that characterize their thermo-optic performance, including the thermo-optic coefficient, the efficiency for the optically induced thermo-optic process, and the thermal conductivity. The characteristics of these parameters are compared to those of other materials commonly used for integrated photonic platforms, such as silicon, silicon nitride, and silica. These results offer a comprehensive insight into the thermo-optic properties of HIDS based devices. Understanding these properties is essential for efficiently controlling and engineering them in many practical applications.

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Thermal conductivity of e-beam coatings

Cited by 14 publications

References 0 publications

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Conductive Filament Expansion in TaO_xBipolar Resistive Random Access Memory during Pulse Cycling

Bistability and Thermal Studies in High Index Doped Silica Integrated Ring Resonators

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Thermal conductivity of e-beam coatings

Cited by 14 publications

References 0 publications

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Conductive Filament Expansion in TaOxBipolar Resistive Random Access Memory during Pulse Cycling

Bistability and Thermal Studies in High Index Doped Silica Integrated Ring Resonators

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Conductive Filament Expansion in TaO_xBipolar Resistive Random Access Memory during Pulse Cycling