Thermal Conductive Properties of a Semiconductor Laser on a Polymer Interposer

Amano, Tsuyoshi; Ukita, Shigenari; Ma, Laina; Aoyagi, Masahiro; Sugaya, Takeyoshi; Komori, Kazuhiro

doi:10.7567/jjap.52.04cg05

Cited by 4 publications

(3 citation statements)

References 26 publications

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“…UV photodetectors (PDs) have received considerable attention for their widely varied applications in environmental analysis and monitoring, missile plume detection, optical switching, secure communication, and optoelectronic circuits. [ 1–5 ] Currently, Si‐based UV PDs are widely used, however, their short band gap of 1.12 eV results in shallow penetration, lowering quantum efficiency in the deep UV region. [ 6 ] As a result, GaN has been recognized as a promising material for developing high‐performance UV PDs due to its outstanding properties such as a wide direct band gap (3.44 eV at room temperature), high carrier mobility, good thermal conductivity, and excellent radiation resistance.…”

Section: Introductionmentioning

confidence: 99%

New Charge Carrier Transport‐Assisting Paths in Ultra‐Long GaN Microwire UV Photodetector

Um,

Chandran,

Kim

et al. 2023

Adv Funct Materials

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GaN‐based materials are the hottest research topic in UV photodetectors (PDs) because of their low operating voltage, small volume, long lifetime, high‐temperature resistance, and low energy consumption. However, there are still fundamental issues to be overcome, and the most important issue is to get a photoconductive gain. In this paper, the following new approaches are provided to innovatively improve the photoconductive gain of UV PDs in GaN‐based materials. First, the aspect ratio of the 1D GaN microwire (MW) structure is dramatically improved by analyzing the pulse growth mechanism using the metal‐organic vapor deposition system. Second, the comprehensive strain behavior in the MW epitaxial growth system is successfully analyzed. Third, the fabricated metal‐semiconductor‐metal‐based MW UV PD shows photoresponsivity and sensitivity of 28.365 A W−1 and 93.16%, respectively, at the −2 V bias, which significantly outperforms the conventional structures in the UV region. Finally, a trap‐assisted Poole–Frenkel effect‐based energy bandgap mechanism, that allows the defect level formed by lattice mismatch between the substrate and GaN to be used as an electron carrier path, is newly defined. This study will present the direction of future UV PDs by providing a new MW structure based on GaN materials, a third‐generation semiconductor.

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Section: Introductionmentioning

confidence: 99%

New Charge Carrier Transport‐Assisting Paths in Ultra‐Long GaN Microwire UV Photodetector

Um,

Chandran,

Kim

et al. 2023

Adv Funct Materials

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“…1(b) and 1(c)]. 23,24) In this study, we aim to investigate the possibility of using this bonding approach of stacking EELs onto an interposer at given position and height for feeding to embedded waveguides, at acceptably low bonding temperature and bonding force. As the bonding accuracies in the horizontal plane are determined by the bonder, the investigation would focus on controlling the bonding height of EELs.…”

Section: Introductionmentioning

confidence: 99%

A method enabling height-control of chips for edge-emitting laser stacking

Thanh¹,

Ma²,

Amano³

et al. 2015

Jpn. J. Appl. Phys.

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In this paper we present a stacking method that enables the mounting of edge-emitting laser (EEL) devices at compulsory positions for feeding a coupling waveguide at a low temperature, i.e., 110 °C. Bonding laser chips are integrated to an interposer with embedded waveguides using an electrically conductive adhesive (ECA), i.e., silver-filled epoxy resin that relied on the surface tension phenomenon. A simple dispensing technique based on the capillary effect was used to generate adhesive droplets for bonding purposes. The ability to control the bonding height from 3 to 25 µm was demonstrated. While the post-bond in-plane offsets of the bonding EEL chip are determined by the accuracy of the bonder (i.e., within 2 µm range), the bonding height can be engineered, with a deviation within 1 µm, by balancing the external bonding forces with the surface tension of a certain adhesive volume. The reliability of the bond, i.e., bond strength of 106 gf, and heat dissipation function of the ECA, were also validated. The results obtained in this work imply that the use of this low-temperature, height-controllable approach for the stacking of EEL continues to look highly promising.

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“…In our study, we propose of an integration approach based on the flip-chip bonding technology using of an electrically conductive silver-filled adhesive, to stack EELs on to the interposer feeding for embedding waveguides ( Fig. 1(a)) [1]. In this paper, the demonstration of the approach to control the bonding height of EELs will be reported.…”

Section: Introductionmentioning

confidence: 99%

A Method Enables Height-Control of Bonding Chip for Edge-Emitting Laser Stacking

Aoyagi

Thanh

et al. 2014

Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials

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This paper presents a stacking method that enables mounting of an edge-emitting laser (EEL) to required position for feeding a coupling waveguide. The bonding laser chip is integrated to an interposer with embedding waveguide using an electrically conductive silver-filled adhesive. The post-bond in-plane offsets of the bonding EEL chip are determined by the accuracy of the bonder while the bonding height can be adjusted by balancing the external bonding forces with the surface tension of a certain adhesive volume. The experimental demonstration reveals the feasibility of using the approach for EEL devices stacking.

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Thermal Conductive Properties of a Semiconductor Laser on a Polymer Interposer

Cited by 4 publications

References 26 publications

New Charge Carrier Transport‐Assisting Paths in Ultra‐Long GaN Microwire UV Photodetector

New Charge Carrier Transport‐Assisting Paths in Ultra‐Long GaN Microwire UV Photodetector

A method enabling height-control of chips for edge-emitting laser stacking

A Method Enables Height-Control of Bonding Chip for Edge-Emitting Laser Stacking

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