Thermal characterization of power devices by scanning thermal microscopy techniques

Fiege, G.B.M.; Niedernostheide, F.‐J.; Schulze, H.‐J.; Barthelmess, R.; Balk, L.J.

doi:10.1016/s0026-2714(99)00163-8

Cited by 15 publications

(9 citation statements)

References 6 publications

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“…Single to be commercialized for more than 15 years, the Wollaston probe in passive mode was used for microsystem diagnostics . It was successfully used to characterize the temperature profile measurements of a PN thermoelectric couple and shown to be useful for failure localization and analysis of integrated circuits . These studies were made in ac regime.…”

Section: Applicationsmentioning

confidence: 99%

Scanning thermal microscopy: A review

Gomès

Assy

Chapuis

2015

Phys. Status Solidi A

225

218

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Fundamental research and continued miniaturization of materials, components and systems have raised the need for the development of thermal-investigation methods enabling ultra-local measurements of surface temperature and thermophysical properties in many areas of science and applicative fields. Scanning thermal microscopy (SThM) is a promising technique for nanometer-scale thermal measurements, imaging, and study of thermal transport phenomena. This review focuses on fundamentals and applications of SThM methods. It inventories the main scanning probe microscopy-based techniques developed for thermal imaging with nanoscale spatial resolution. It describes the approaches currently used to calibrate the SThM probes in thermometry and for thermal conductivity measurement. In many cases, the link between the nominal measured signal and the investigated parameter is not straightforward due to the complexity of the micro/nanoscale interaction between the probe and the sample. Special attention is given to this interaction that conditions the tip-sample interface temperature. Examples of applications of SThM are presented, which include the characterization of operating devices, the measurements of the effective thermal conductivity of nanomaterials and local phase transition temperatures. Finally, future challenges and opportunities for SThM are discussed.

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Section: Applicationsmentioning

confidence: 99%

Scanning thermal microscopy: A review

Gomès

Assy

Chapuis

2015

Phys. Status Solidi A

225

218

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“…Brekel et al [11] propose soldering the gate-resistor directly onto an IGBT chip and using the temperature dependence of its resistance to evaluate the semiconductor temperature. Finally, more accurate methods use microprobes [27]. Their small size, which leads to a low thermal capacitance, allows fast measurements without any heat transfer disturbances.…”

Section: Introductionmentioning

confidence: 99%

Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review

Avenas

Dupont²,

Khatir³

2012

IEEE Trans. Power Electron.

439

202

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This paper proposes a synthesis of different electrical methods used to estimate the temperature of power semiconductor devices. The following measurement methods are introduced: the voltage under low current levels, the threshold voltage, the voltage under high current levels, the gate-emitter voltage, the saturation current and the switching times. All these methods are then compared in terms of sensitivity, linearity, accuracy, genericity, calibration needs and possibility of characterizing the thermal impedance or the temperature during the operation of the converter. The measurement of thermo-sensitive parameters of wide band gap semi conductors is also discussed.

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“…Scanning probe techniques play an important role in understanding nanoscale energy conversion and transport. [1][2][3][4] Specifically, scanning thermal microscopy (SThM) has been widely used for local measurements of temperature fields, [5][6][7][8][9][10][11][12][13][14][15][16] thermal conductivity, [17][18][19] thermopower, 20,21 atomic-scale heat dissipation, 3 and even nanoscale thermal lithography. 22,23 In all SThM techniques, a temperature sensor (thermocouple or resistance-based thermometer), which can measure local temperatures and/or generate local heating, is integrated into the probe.…”

mentioning

confidence: 99%

Quantification of thermal and contact resistances of scanning thermal probes

Kim

Jeong

Lee

et al. 2014

Applied Physics Letters

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Scanning thermal probes are widely used for imaging temperature fields with nanoscale resolution, for studying near-field radiative heat transport and for locally heating samples. In all these applications, it is critical to know the thermal resistance to heat flow within the probe and the thermal contact resistance between the probe and the sample. Here, we present an approach for quantifying the aforementioned thermal resistances using picowatt resolution heat flow calorimeters. The measured contact resistance is found to be in good agreement with classical predictions for thermal contact resistance. The techniques developed here are critical for quantitatively probing heat flows at the nanoscale.

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Thermal characterization of power devices by scanning thermal microscopy techniques

Cited by 15 publications

References 6 publications

Scanning thermal microscopy: A review

Scanning thermal microscopy: A review

Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review

Quantification of thermal and contact resistances of scanning thermal probes

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