Fundamental research and continued miniaturization of materials, components and systems have raised the need for the development of thermal-investigation methods enabling ultra-local measurements of surface temperature and thermophysical properties in many areas of science and applicative fields. Scanning thermal microscopy (SThM) is a promising technique for nanometer-scale thermal measurements, imaging, and study of thermal transport phenomena. This review focuses on fundamentals and applications of SThM methods. It inventories the main scanning probe microscopy-based techniques developed for thermal imaging with nanoscale spatial resolution. It describes the approaches currently used to calibrate the SThM probes in thermometry and for thermal conductivity measurement. In many cases, the link between the nominal measured signal and the investigated parameter is not straightforward due to the complexity of the micro/nanoscale interaction between the probe and the sample. Special attention is given to this interaction that conditions the tip-sample interface temperature. Examples of applications of SThM are presented, which include the characterization of operating devices, the measurements of the effective thermal conductivity of nanomaterials and local phase transition temperatures. Finally, future challenges and opportunities for SThM are discussed.

Perfectly crystalline solids are excellent heat conductors. Prominent counterexamples are intermetallic clathrates, guest-host systems with a high potential for thermoelectric applications due to their ultralow thermal conductivities. Our combined experimental and theoretical investigation of the lattice dynamics of a particularly simple binary representative, Ba(8)Si(46), identifies the mechanism responsible for the reduction of lattice thermal conductivity intrinsic to the perfect crystal structure. Above a critical wave vector, the purely harmonic guest-host interaction leads to a drastic transfer of spectral weight to the guest atoms, corresponding to a localization of the propagative phonons.

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A scanning thermal microscope (SThM) in the dc regime was used to study the thermal conductivity of homogeneous in-depth meso-porous silicon in the form of thin films on a monocrystalline silicon substrate. Measurements for different film porosities (30–80%) and thicknesses (100 nm–8 µm) were performed in order to estimate the influence of both layer porosity and thickness on the thermal conductivity values of porous silicon (PS). An analytical model predicting the SThM measurement in the case of ultra-thin monolayered samples was used to calibrate the technique, to analyse experimental data and to determine the thermal conductivity of meso-porous layers. Effective thermal conductivity of meso-PS films was found to decrease when the porosity increases. The effective thermal conductivities measured for thick porous layers (several µm) are in good accordance with those measured by micro-Raman-spectroscopy on bulk meso-PS samples. For submicrometric thicknesses (<1 µm), the effective thermal conductivity of layers decreases significantly with decreasing layer thickness due to the increased sensitivity of measurements to the thermal resistance of the film/substrate interface. An intrinsic thermal conductivity of PS was calculated independently of the film thickness and the values of interfacial thermal resistances were thus estimated. From the apparatus point of view, the results obtained show that the depth being sensed is of the order of a few micrometres for insulating materials and depends on the thermal conductivity of the films.

In this article, we demonstrate that the thermal conductivity of nanostructured porous silicon is reduced by amorphization and also that this amorphous phase in porous silicon can be created by swift (high-energy) heavy ion irradiation. Porous silicon samples with 41%-75% porosity are irradiated with 110 MeV uranium ions at six different fluences. Structural characterisation by micro-Raman spectroscopy and SEM imaging show that swift heavy ion irradiation causes the creation of an amorphous phase in porous Si but without suppressing its porous structure. We demonstrate that the amorphization of porous silicon is caused by electronic-regime interactions, which is the first time such an effect is obtained in crystalline silicon with single-ion species. Furthermore, the impact on the thermal conductivity of porous silicon is studied by micro-Raman spectroscopy and scanning thermal microscopy. The creation of an amorphous phase in porous silicon leads to a reduction of its thermal conductivity, up to a factor of 3 compared to the non-irradiated sample. Therefore, this technique could be used to enhance the thermal insulation properties of porous Si. Finally, we show that this treatment can be combined with pre-oxidation at 300 °C, which is known to lower the thermal conductivity of porous Si, in order to obtain an even greater reduction.

The Scanning Thermal Microscopic (SThM) probe, a thin Pt resistance wire, is used in the constant force mode of an Atomic Force Microscope (AFM). Thermal signal-distance curves for differing degrees of relative humidity and different surrounding gases demonstrate how heat is transferred from the heated probe to the sample. It is known that water affects atomic force microscopy and thermal measurements; we report here on the variation of the water interaction on the thermal coupling versus the probe temperature. Measurements were taken for several solid materials and show that the predominant heat transfer mechanisms taking part in thermal coupling are dependent on the thermal conductivity of the sample. The results have important implications for any quantitative interpretation of thermal images made in air.

The thermal investigation of matter by use of a very localized heat source, scanning thermal microscopy (SThM), permits materials to be probed at the level of very small subsurface volumes. Therefore, the technique appears to be a promising method to study the thermal properties of thin films of submicrometric thickness. In order to estimate this possibility, we propose a new prediction modelling of the measurement with a SThM based on a hot anemometer wire probe used in a dc regime. From this modelling, a study of the sensitivity of measurement to various parameters operating in the thermal interaction between the probe and a mono-layered sample is presented. It gives new data allowing a better understanding of measurements. A new method to calibrate the technique for thermal conductivity measurement with more accuracy is deduced from this study. New data about the different physical mechanisms governing the probe–sample thermal interaction are given. The proposed approach also supplies a method for the determination of the depth resolution of a thermal probe. This last parameter is essential in the framework of thin film study with a given probe. Its dependence on sample thermal conductivity and thermal coupling area are discussed. Our results specify the possibilities of the technique and should contribute to a more accurate determination of thin film thermal conductivity in its dc regime.

International audienceThis article investigates heat transfer at nanoscale contacts through scanning thermal microscopy (SThM) under vacuum conditions. Measurements were performed using two types of resistive SThM probes operating in active mode on germanium and silicon samples. The experiments measure the heat transfer through the nanoscale point contacts formed between the probe apex, platinum-rhodium alloy, or silicon nitride depending on the probe used, and the samples. The thermal resistance at the probe apex-sample interface becomes extremely important as the contact size becomes smaller or comparable to the phonon mean free path within the materials in contact. This resistance is derived from the measurements using a nanoconstriction model. Consistent to what is expected, the interfacial thermal resistance is found to be dependent on the tip and sample. Assuming perfect interfaces, the thermal boundary resistance Rb is determined for the different contacts. Results obtained for Rb range from 10−9 m2 K W−1 up to 14 × 10−9 m2 K W−1 and have the same order of magnitude of values previously published for other materials. The determination of the averaged phonon transmission coefficient t from the data is discussed, and coefficients t for the Si3N4/Ge and Si3N4/Si contacts are estimated based on the diffuse mismatch model (t Si3N4 /Ge = 0.5 and t Si3N4/Si = 0.9). Heat transfer at nanoscale contacts investigated with scanning thermal microscopy (PDF Download Available). Available from: https://www.researchgate.net/publication/281550668_Heat_transfer_at_nanoscale_contacts_investigated_with_scanning_thermal_microscopy [accessed Mar 8, 2016]