Thermal Characterization of Field Plated AlGaN/GaN HEMTs

Dundar, Canberk; Dönmezer, Nazlı

doi:10.1109/itherm.2019.8757323

Cited by 4 publications

(4 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although much attention has been given to the interface between GaN and the substrate, very little attention has gone into investigating the thermal resistance that occurs between the active layers in the device and the metallization, or even the interface between AlGaN and GaN, where the 2DEG forms. Several recent studies have proposed methodologies for probing the peak device temperature, using a combination of thermoreflectance and Raman temperature measurement techniques [144,145]. In conjunction with multiscale finite element and molecular dynamics models, accurate determination of the peak temperature rise in the devices for a given measured temperature rise at the surface or of the volume may be inferred [144,146].…”

Section: Ganmentioning

confidence: 99%

“…Several recent studies have proposed methodologies for probing the peak device temperature, using a combination of thermoreflectance and Raman temperature measurement techniques [144,145]. In conjunction with multiscale finite element and molecular dynamics models, accurate determination of the peak temperature rise in the devices for a given measured temperature rise at the surface or of the volume may be inferred [144,146]. However, owing to the interfaces that are necessary to make a device with AlGaN on GaN, the overall thermal resistance of the devices increases, leading to peak temperature rise of up to 42% over the case where the interface is perfectly thermally conductive.…”

Section: Ganmentioning

confidence: 99%

See 1 more Smart Citation

Applications and Impacts of Nanoscale Thermal Transport in Electronics Packaging

Warzoha

Wilson

Donovan

et al. 2021

Journal of Electronic Packaging

Self Cite

View full text Add to dashboard Cite

This review introduces relevant nanoscale thermal transport processes that impact thermal abatement in power electronics applications. Specifically, we highlight the importance of nanoscale thermal transport mechanisms at each layer in material hierarchies that make up modern electronic devices. This includes those mechanisms that impact thermal transport through: (1) substrates, (2) interfaces and 2-D materials and (3) heat spreading materials. For each material layer, we provide examples of recent works that (1) demonstrate improvements in thermal performance and/or (2) improve our understanding of the relevance of nanoscale thermal transport across material junctions. We end our discussion by highlighting several additional applications that have benefited from a consideration of nanoscale thermal transport phenomena, including RF electronics and neuromorphic computing.

show abstract

Section: Ganmentioning

confidence: 99%

Section: Ganmentioning

confidence: 99%

Applications and Impacts of Nanoscale Thermal Transport in Electronics Packaging

Warzoha

Wilson

Donovan

et al. 2021

Journal of Electronic Packaging

Self Cite

View full text Add to dashboard Cite

show abstract

“…In addition, the HEMT has other layers that provide other functions. To control voltage and current, it has three electrodes, the drain, and source with an ohmic contact and the gate with a Schottky contact [2,17,18]. For our case study, we are interested in the singlefinger HEMT.…”

Section: Device Descriptionmentioning

confidence: 99%

Multi-objective optimization of the high electron mobility transistor

Amar,

El Maani,

Radi

et al. 2023

Int. J. Simul. Multidisci. Des. Optim.

View full text Add to dashboard Cite

In this paper, we present a new approach to improve the thermo-mechanical performance of the HEMT (high electron mobility transistor) technology. This study aims to solve two optimization problems. The first one is the optimization of the thermal behavior of the HEMT, through the optimization of its maximum operating temperature which influences the electrical characteristics such as electron mobility, and also influences the mechanical behavior of its structure. While the second problem will be the optimization of the mechanical behavior of the same technology, through the optimization of the stresses distribution that also influence the electrical characteristics and reliability of the HEMT structure. The resolution of these two optimization problems will be done, by the multi-objective optimization approach thanks to numerical tools such as Comsol multiphysics and Matlab software, which allows to solve these two problems simultaneously by taking into consideration the imposed constraints. The results obtained have optimized the thermo-mechanical behavior of the HEMT, which proves the efficiency of this approach to solve complex optimization problems.

show abstract

“…One of the important points in the electrothermal analysis is the simulated lengths of drain and source contacts. In the literature, many researchers make these dimensions as small as possible to reduce the required simulation area and node number [11], [27], [35], [36]; sometimes, they do not mention the length at all. However, because adiabatic boundary conditions are used at the edge of the simulation area, the boundaries can be considered as mirrors, that is, there are symmetrical and identical devices on the other side of the boundary.…”

Section: Tcad Simulationsmentioning

confidence: 99%

Improved T _MAX Estimation in GaN HEMTs Using an Equivalent Hot Point Approximation

Odabasi

Akar

Bütün

et al. 2020

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

In this article, heat generation distribution and maximum device temperature of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) are investigated by using the 2-D electrothermal and finite-element method (FEM) simulations. Devices with different gate lengths and source-to-drain spacing are investigated. It is observed that the maximum device temperature (T MAX) depends on the drain-to-source spacing and is almost independent of the gate length and that the assumption of a uniform heat generation region, under the gate, is not accurate; this is contrary to conventional calculation methods. Moreover, based on the results, a new approximation is proposed to use in the FEM simulations that can estimate T MAX more accurately. This method does not require physics-based technology computer-aided design (TCAD) simulations and can work with a low mesh density. The performance is compared with prior methods. Index Terms-2-D device simulations, AlGaN, channel temperature, finite-element analysis, gallium nitride (GaN), high-electron-mobility transistors (HEMTs), hot point, selfheating, technology computer-aided design (TCAD), thermal analysis, thermal resistance. I. INTRODUCTION G ALLIUM-NITRIDE (GaN)-based high-electronmobility transistors (HEMTs) are high-performance devices that show superior performance in high-power amplifiers and switching applications [1]-[3]. The high bandgap leads to an elevated breakdown voltage [4]. The 2-D electron gas (2DEG) provides excellent electron mobility Manuscript

show abstract

Thermal Characterization of Field Plated AlGaN/GaN HEMTs

Cited by 4 publications

References 25 publications

Applications and Impacts of Nanoscale Thermal Transport in Electronics Packaging

Applications and Impacts of Nanoscale Thermal Transport in Electronics Packaging

Multi-objective optimization of the high electron mobility transistor

Improved T _MAX Estimation in GaN HEMTs Using an Equivalent Hot Point Approximation

Contact Info

Product

Resources

About

Thermal Characterization of Field Plated AlGaN/GaN HEMTs

Cited by 4 publications

References 25 publications

Applications and Impacts of Nanoscale Thermal Transport in Electronics Packaging

Applications and Impacts of Nanoscale Thermal Transport in Electronics Packaging

Multi-objective optimization of the high electron mobility transistor

Improved T MAX Estimation in GaN HEMTs Using an Equivalent Hot Point Approximation

Contact Info

Product

Resources

About

Improved T _MAX Estimation in GaN HEMTs Using an Equivalent Hot Point Approximation