Thermal behaviour of CpCuPEt3 in gas phase and Cu thin films processing

Senocq, François; Turgambaeva, Asiya E.; Prudhomme, Nathalie; Patil, Urmila; Krisyuk, Vladislav V.; Samélor, Diane; Gleizes, Alain; Vahlas, Constantin

doi:10.1016/j.surfcoat.2007.05.011

Cited by 18 publications

(27 citation statements)

References 17 publications

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“…The synthesis of Cu(I) and Ag(I) metal organic complexes is commonly achieved by reacting a transition metal salt with the desired oxidation state with a combination of an anionic ligand and a -donor ligand in a one-pot reaction followed by purification [163][164][165][166][167][168][169][170][171][172][173][174][175][176][177][178]. Similarly, Cu(II) MC precursors are obtained in an analogous manner from Cu(II) salts [179][180][181][182].…”

Section: Metal Complexes Applicable To Inkjet Ink Formulationsmentioning

confidence: 99%

Metal-based Inkjet Inks for Printed Electronics

Kamyshny¹,

Steinke²,

Magdassi

2011

TOAPJ

368

242

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Abstract:A review on applications of metal-based inkjet inks for printed electronics with a particular focus on inks containing metal nanoparticles, complexes and metallo-organic compounds. The review describes the preparation of such inks and obtaining conductive patterns by using various sintering methods: thermal, photonic, microwave, plasma, electrical, and chemically triggered. Various applications of metal-based inkjet inks (metallization of solar cell, RFID antennas, OLEDs, thin film transistors, electroluminescence devices) are reviewed.

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Section: Metal Complexes Applicable To Inkjet Ink Formulationsmentioning

confidence: 99%

Metal-based Inkjet Inks for Printed Electronics

Kamyshny¹,

Steinke²,

Magdassi

2011

TOAPJ

368

242

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“…Vapor pressure studies of 6 displayed volatility (260°C, 118.6 mbar) in the range of other copper precursors. [6,8,79] Hence, 6 was used as CVD precursor for the formation of Cu and CuO deposits. Deposition parameters have been varied to investigate the influence on the morphology of the samples.…”

Section: Discussionmentioning

confidence: 99%

Synthesis of β‐Ketoiminato Copper(II) Complexes and Their Use in Copper Deposition

Preuß

Korb

Rüffer

et al. 2020

Zeitschrift anorg allge chemie

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The template synthesis of ethylenediamine (1) with 2‐acetylcyclopentanone (2) and [Cu(OAc)2·H2O] (5) produced [Cu(1‐(2‐cC5H6(O))C(Me)NCH2)2)] (6) in 82 % yield. Reaction of 5 with bis(benzoylacetone)diethylenetriamine (7, = LH)[1] gave [Cu(μ‐OAc)(L)(H2O)]2 (8). The solid‐state structures of 6 and 8 were determined confirming that 8 possesses intra‐ and intermolecular hydrogen bonds resulting in a dimer formation. The thermal behavior of 6–8 was studied by TG and TG‐MS. Under oxygen CuO was formed, whereas under Ar Cu/Cu2O (6) or Cu (8) was obtained. Complex 6 was used as CVD precursor for Cu and Cu‐oxide deposition (substrate temp., 400–500 °C, N2, 60 mL·min–1; O2, 60 mL·min–1; pressure, 0.87–1.5 mbar). The as‐obtained deposits show separated particles of different appearance at the substrate surface as evidenced by SEM. Non‐volatile 8 was applied as spin‐coating precursor for Cu and CuO formation [conc. 0.25 mol·L–1; volume 0.2 mL; 3000 rpm; depos. time 2 min; heating rate 50 K·min–1; holding time 60 min (Ar), 120 min (air) at 800 °C]. The samples on silicon consist of granulated particles (Ar) or are non‐dense with a grainy topography (air). EDX and XPS measurements confirmed the formation of Cu (Ar) or CuO (O2) with up to 13 mol‐% C impurity.

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“…As can be seen from the calculated vapor pressures of complexes 2-5b at 60 ºC, shown in Table 6, the order of volatility is 3b>4b>>2b>5b, which is attributed to the difference in cyclopentadienyl substituent such that the order of volatility can be viewed as Me-Cp > Et-Cp > H-Cp > i Pr-Cp; in fact comparison of the vapor pressures of 3b and 4b at 60 ºC with commercially available copper precursors, specifically Cyclopentadienyl(triethylphosphine)copper(I) and CupraSelect™ (200 mTorr and 150 mTorr respectively) shows 3b and 4b to be more volatile at these operating temperatures. 35,38 Despite the significant effects of the both the methyl-and ethyl-substituents on the volatility of the cyclopentadienyl (tert-butyl isocyanide) copper(I) systems 3b and 4b, the stability of complex 4b was found to be low, and the compound was observed to decompose on standing at room temperature over a period of weeks, producing a black micro-crystalline powder identified as copper metal. More significantly, attempts to synthesize the corresponding methyl and ethylcyclopentadienyl (iso-propylisocyanide) copper (I) complexes (3a and 4a) and the methylcyclopentadienyl (cyclo-hexyl isocyanide) copper (I) complex (3c) in the hope that these compounds would be suitable and possibly liquid precursors were met with mixed results; compound 4a could not be synthesized and multiple attempts to produce the complex under varied conditions met with the formation of copper metal.…”

Section: B 4bmentioning

confidence: 99%

Tailoring Precursors for Deposition: Synthesis, Structure, and Thermal Studies of Cyclopentadienylcopper(I) Isocyanide Complexes

et al. 2015

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We report here the synthesis and characterization of a family of copper(I) metal precursors based around cyclopentadienyl and isocyanide ligands. The molecular structures of several cyclopentadienylcopper(I) isocyanide complexes have been unambiguously determined by single-crystal X-ray diffraction analysis. Thermogravimetric analysis of the complexes highlighted the isopropyl isocyanide complex [(η(5)-C5H5)Cu(CN(i)Pr)] (2a) and the tert-butyl isocyanide complex [(η(5)-C5H5)Cu(CN(t)Bu)] (2b) as possible copper metal chemical vapor deposition (CVD) precursors. Further modification of the precursors with variation of the substituents on the cyclopentadienyl ligand system (varying between H, Me, Et, and (i)Pr) has allowed the affect that these changes would have on features such as stability, volatility, and decomposition to be investigated. As part of this study, the vapor pressures of the complexes 2b, [(η(5)-MeC5H4)Cu(CN(t)Bu)] (3b), [(η(5)-EtC5H4)Cu(CN(t)Bu)] (4b), and [(η(5)-(i)PrC5H4)Cu(CN(t)Bu)] (5b) over a 40-65 °C temperature range have been determined. Low-pressure chemical vapor deposition (LP-CVD) was employed using precursors 2a and 2b to synthesize thin films of metallic copper on silicon, gold, and platinum substrates under a H2 atmosphere. Analysis of the thin films deposited onto both silicon and gold substrates at substrate temperatures of 180 and 300 °C by scanning electron microscopy and atomic force microscopy reveals temperature-dependent growth features: Films grown at 300 °C are continuous and pinhole-free, whereas films grown at 180 °C consist of highly crystalline nanoparticles. In contrast, deposition onto platinum substrates at 180 °C shows a high degree of surface coverage with the formation of high-density, continuous, and pinhole-free thin films. Powder X-ray diffraction and X-ray photoelectron spectroscopy (XPS) both show the films to be high-purity metallic copper.

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Thermal behaviour of CpCuPEt3 in gas phase and Cu thin films processing

Abstract: OATAO is an open access repository that collects the work of Toulouse researchers and makes it freely available over the web where possible.

Cited by 18 publications

References 17 publications

Metal-based Inkjet Inks for Printed Electronics

Metal-based Inkjet Inks for Printed Electronics

Synthesis of β‐Ketoiminato Copper(II) Complexes and Their Use in Copper Deposition

Tailoring Precursors for Deposition: Synthesis, Structure, and Thermal Studies of Cyclopentadienylcopper(I) Isocyanide Complexes

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