Based on the combination of first-principles calculations, Boltzmann transport equation, and electron-phonon interaction (EPI), we investigate the thermal and electronic transport properties of crystalline cinnabar (α-HgS). The calculated lattice thermal conductivity κ L is remarkably low, e.g., 0.60 Wm −1 K −1 at 300 K, which is about 30% of the value for the typical thermoelectric material PbTe. Via taking fully into account the k dependence of the electron relaxation time computed from the EPI matrix, the accurate numerical results of thermopower S, electrical conductivity σ , and electronic thermal conductivity κ E are obtained. The calculated power factor S 2 σ is relatively high while the value of κ E is negligible, which, together with the fairly low κ L , leads to a good thermoelectric performance in the n-type doped α-HgS, with the figure of merit zT even exceeding 1.4. Our analyses reveal that (i) the large weighted phase space and the quite low phonon group velocity result in the low κ L , (ii) the presence of flat band around the Fermi level combined with the large band gap causes the high S, and (iii) the small electron linewidths of the conduction band lead to a large relaxation time and thus a relatively high σ. These results support that α-HgS is a potential candidate for thermoelectric applications.