Thermal atomic layer deposition of In₂O₃ thin films using a homoleptic indium triazenide precursor and water

Abstract

Indium oxide (In2O3) is an important transparent conducting material widely used in optoelectronic applications. Herein, we study the deposition of In2O3 by thermal atomic layer deposition (ALD) using our recently...

Synthesis, Structure and Thermal Properties of Volatile Indium and Gallium Triazenides**

“…However, in those studies their suitability for vapour deposition was not investigated. In contrast, we recently revealed the In(III) and Ga(III) 1,3‐diisopropyltriazenides 1 a and 2 a (Figure 1) and their subsequent use in ALD of InN, GaN, InGaN and In 2 O 3 [33–36] . It should be noted that 2 a was the first example of a homoleptic hexacoordinated M−N bonded compound used for vapour deposition.…”

“…In contrast, we recently revealed the In(III) and Ga(III) 1,3-diisopropyltriazenides 1 a and 2 a (Figure 1) and their subsequent use in ALD of InN, GaN, InGaN and In 2 O 3 . [33][34][35][36] It should be noted that 2 a was the first example of a homoleptic hexacoordinated MÀ N bonded compound used for vapour deposition. Interestingly, both compounds underwent gas-phase thermolysis at high temperatures inside the ALD reactor to give a smaller and more reactive metal species.…”

High-performance ammonia gas sensor based on spray pyrolysis developed In2O3:La films

“…A number of methods for producing thin films have been developed recently, including atomic layer deposition [17], hydrothermal synthesis [18,19], magnetron sputtering [20], sol-gel approach [21], electro spinning [22], and nebulizer spray pyrolysis (NSP) [23][24][25]. Among several synthesis methods, NSP technique is a simple and versatile deposition procedure that does not require vacuum condition and allows for the easy fabrication of films with diverse compositions, dense and porous films.…”

Synthesis, Structure, and Thermal Properties of Volatile Group 11 Triazenides as Potential Precursors for Vapor Deposition

“…Recently, we reported the first examples of volatile group 13 and 14 dialkyltriazenides. − The Ga and In triazenides have been used as ALD precursors to afford excellent-quality GaN, InN, InGaN, and In 2 O 3 . ,,− With the success of the triazenide ligand to produce volatile and thermally stable group 13 and 14 compounds, we decided to investigate its reactivity with monovalent coinage metals. Herein, we report the synthesis, structure, and thermal properties of monovalent group 11 triazenides.…”