Synthesis, Structure, and Thermal Properties of Volatile Group 11 Triazenides as Potential Precursors for Vapor Deposition

Abstract

Group 11 thin films are desirable as interconnects in microelectronics. Although many M−N-bonded Cu precursors have been explored for vapor deposition, there is currently a lack of suitable Ag and Au derivatives. Herein, we present monovalent Cu, Ag, and Au 1,3-di-tert-butyltriazenides that have potential for use in vapor deposition. Their thermal stability and volatility rival that of current state-of-the-art group 11 precursors with bidentate M−N-bonded ligands. Solution-state thermolysis of these triazenides yielded polycrystalline films of elemental Cu, Ag, and Au. The compounds are therefore highly promising as single-source precursors for vapor deposition of coinage metal films.

Synthesis, characterisation and reactivity of a zinc triazenide for potential use in vapour deposition

“…21,22,[27][28][29] The group 11 triazenides have great promise as single-source precursors, whilst the group 14 triazenides have desirable thermal and volatility properties. 24,26 During our studies, volatile and thermally stable lanthanide dialkyltriazenides have also been reported. 30 With the success of the triazenide ligand to produce volatile and thermally stable metal compounds, we decided to investigate its reactivity with divalent Zn.…”

“…Recently, we reported a range of volatile 1,3-dialkyltriazenide compounds for group 11, 13, and 14 metals. [21][22][23][24][25][26] The Ga and In triazenides have been used as ALD precursors to afford excellent quality thin films of GaN, InN, InGaN, and In 2 O 3 . 21,22,[27][28][29] The group 11 triazenides have great promise as single-source precursors, whilst the group 14 triazenides have desirable thermal and volatility properties.…”