Thermal and Thermomechanical Analysis of a 10 kV SiC MOSFET Package with Double-Sided Cooling

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

“…Further, as most of the heat is removed through the device metal contacts, the effective heat dissipation area will be smaller for a junction-side cooling package than for a bottom-side cooling package since the bottom metal contact covers the entire chip area while the top contact does not due to the edge termination, gate and passivation. Double-side cooling packages (shown in figure 3(c)) are gaining increased attention for their superior thermal management due to both bottom-and top-side cooling paths [21,84,85]. Such a package may offer the opportunity to address the thermal limitations of some WBG or UWBG materials with low k T .…”

“…Examples of such interconnect methods include soldering lead frames or substrates directly to the die topside contacts [20,76,92], soldering or sintering Cu, Mo or Cu-Mo posts or bumps between the die and the substrate [93][94][95][96], and drilling and electroplating Cu-filled vias for PCB-embedded packages [97][98][99]. As an example, the use of Cu and Mo posts in a double-side cooled configuration was utilized to achieve an overall R th,j-c of just 0.17 • C W −1 for a 10 kV, 25 A SiC MOSFET [85].…”

“…In addition, removing the baseplate reduces the form factor of the pack and machining and material costs, and improves the reliability of the thermal interfaces such that R th can be maintained for a higher number of cycles [102]. At higher voltages, 10 kV SiC MOSFET power modules have been demonstrated both in academia and industry with traditional bottom-side cooling packages [103,104] and, more recently, double-side cooling packages [85]. A comprehensive review of SiC power module packaging is presented in [20,76].…”

“…While this higher-level packaging and integration is not the focus of this article, these exciting research opportunities are worth a mention. For example, in a double-side cooled, multi-chip package, interposers, such as metal bricks, balls or tubes, have been used for device-top interconnection, with Cu being the most widely used interposer material due to its high electrical and thermal conductivity [85]. However, rigid Cu interconnections between the device and the substrates of the power module could bring reliability concerns.…”