Thermal analysis of high power modules

Abstract

A highly descriptive method for displaying heat flow in power modules is presented. Heat flow is studied for three different transistor stack types: Direct Bond Copper (DBC), Thick Film Printed Substrate,and Insulated Metal Substrate (IMS). DBC and thick film are thermally superior to IMS, but IMS shows potential. Inaddition,the effectof case-to-sink interface conductivityonheat flow is studied.

Transient Electrothermal Simulation of Power Semiconductor Devices

“…Direct bond copper (DBC) technology is frequently used in modern power electronic packaging. The copper is directly bonded to a ceramic substrate, such as AlN [25]. Fig.…”

A novel method to fabricate AlN-Al<inf>2</inf>O<inf>3</inf> multiphase ceramic layer on WCu alloy

“…With the rapid development of power semiconductor industry, the types of power semiconductor packages have been developed rapidly to power-modules or intelligent power semiconductor devices [1,2]. The power module needs a substrate to pick and place multiple dies, requiring it has a sufficiently high electrical isolation strength, low dielectric loss and dielectric constant to minimize signal delay time, an appropriate coefficient of thermal expansion (CTE) matching to semiconductor materials of chips, and a high thermal conductivity for efficient heat management [3,4].…”

“…IMS is composed of polymer dielectric layer, metal base-plate and copper circuits [2]. Alumina (Al 2 O 3 ) is the most common ceramic material in the electronic packaging, because of its outstanding characteristics and low fabricating cost [6].…”

“…Recently, due to low thermal conductivity and poor temperature resistant performance of polymer [2], Al 2 O 3 ceramic layer has been used as dielectric layer.…”