Thermal aging model of InP/InGaAs/InP DHBT

5. Reliability

“…where V BEjp is the peripheral internal (junction) base-emitter voltage, while the saturation currents I BEpS and I REpS , as well as the non-ideality factors m BEp and m REp , are model parameters. In [Gho10,Gho11], it was shown that a possible approach to simulate the I B degradation in InP HBTs is to use I REp given by Equation (5.6). More specifically, the I REpS evolution is expected to follow the N t evolution vs. t stress (extracted as, e.g., in the section "Longterm Degradation Test Results").…”

Reliability of high-speed SiGe:C HBT under electrical stress close to the SOA limit

“…As in [10] and [11], an exponential Eq. (3) is used to describe the evolution of the trap density in function of the aging time.…”

“…According to [10], the evolution of the parameter I REpS is proportional to the trap density evolution. The Eq.…”