Thermal accumulation effect of a three-junction GaAs cell with multipulse laser irradiation

Abstract

A theoretical model on accumulation of temperature and stress in a three-junction GaAs solar cell is proposed to analyze its damage characteristics while irradiated by a multipulse laser. The distribution and accumulation effect of temperature and stress with different pulse widths are calculated. Specifically, the influences of pulse energy and duty ratio on the accumulation effect are discussed. Results show that the accumulation is weakened as pulse energy and duty ratio decrease and differ with the different pulse widths. The accumulation rate of stress is more rapid than that of temperature under nanosecond laser irradiation. Furthermore, tensile stress damage is the main damage form under nanosecond laser irradiation, and melting damage will change to main damage from a millisecond laser.

Long-wave infrared laser irradiation damage effect on GaAs/AlGaAs quantum well infrared photodetector

“…Similar to the parameters listed in table 2, the thermodynamic parameters in table 3 also exhibit no variation with temperature. Meanwhile, piecewise functions are employed to describe distinct layer materials in this model, as described: Thermal stress-induced damage is commonly attributed to circumferential stress [23]. Therefore, this study exclusively focuses on discussing the circumferential stress.…”