Characterizing the radiated or received acoustic field of ultrasonic transducers using the spatial impulse response (SIR) represents an important step in testing, design, and optimization of ultrasonic transducers. However, for the ultrahigh-frequency acoustic field, conventional methods, such as the hydrophone method and the small-ball reflection method, are limited by narrow bandwidth and poor spatial resolution. Here, we propose a method to obtain the transducer's SIR through its response to photoacoustic waves, which allows high-precision acoustic field measurements, with spatial resolution as fine as 1.7 µm. We subsequently measure the SIRs of two focused ultrasonic transducers, with 20 and 93 MHz center frequencies, and confirm that the three-dimensional acoustic fields can be accurately reconstructed using the angular spectrum approach. More importantly, this method is unique to receive-only ultrasonic detectors, the SIR of which could not be measured previously with conventional methods, and it could facilitate ultrasonic transducer design, as well as other related fields, such as nondestructive evaluation, biomedical imaging, and particle manipulation.
The InGaAs devices has been chosen as new candidate of solid-state low-light devices because of advantages such as wide response wavelength, high quantum efficiency, high device performance, digitalized readout, high temperature operation, high reliability and long lifetime. It has gained vital development and application in the world. 320×256 InGaAs solid-state low-light devices has been prepared and studied, the p-i-n material structure was grown by MOCVD system. The mesa device structure was chosen and fabricated by inductively coupled plasma (ICP) method. The detector chip and CMOS readout integrated circuit was bonded by flip-chip bonding. The FPAs was packaged to Dewar which temperature could be changed by temperature controller. Both performances of single element device and focal plane arrays were studied in detail. Very simple optics lens was adopted to show the imaging of 1.064μm laser spot and hand. Study results disclose feasible material growth, devices processing and high temperature operation characteristics of InGaAs devices.
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