Theory on STM images of Si(001) surface near defects

Nakamura, Yoshimichi; Kawai, Hiroshi; Nakayama, Minoru

doi:10.1103/physrevb.52.8231

Cited by 30 publications

(14 citation statements)

References 8 publications

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“…Configuration of dimers on surfaces with low densities of C defects (1%∼ similar to our experiments) has been studied by Monte Carlo simulations. [10][11][12] Defects on the surface were demonstrated to significantly influence the configuration of the dimers in the STM images. What is more important, Nakamura et al have shown that the influence of a combination of several defects is much stronger than the sum of the influence of isolated defects.…”

Section: Resultsmentioning

confidence: 98%

“…Usually a symmetric dimer domain is sandwiched between two buckled dimer domains which belong to different phases. Therefore, it is possible to consider that the symmetric dimer domain emerges as a result of fast switching between the surrounding (+) and (−) phased buckled dimer domain 11,12) as shown schematically in Fig. 4(a).…”

Section: Experiments and Resultsmentioning

confidence: 99%

“…This concept was introduced from theoretical researches using Monte Carlo simulations to study the dynamical characteristics of the dimers. [10][11][12] Another interpretation of the symmetric dimer domains is that numerous phasons nominated as P defects migrate along the buckled dimer rows much faster than the scanning rate of STM where the dimers appear symmetric. 14,15) This mechanism is referred to as "symmetric dimers induced by migration of P defects".…”

Section: Experiments and Resultsmentioning

confidence: 99%

“…As the surface temperature is lowered below the critical temperature (∼200 K) of the symmetric⇔buckled phase transition, buckled dimer domains nucleate and grow. [6][7][8][9][10][11][12] Defects and steps on the surface critically influence the nucleation and growth of buckled dimer domains in a sophisticated manner, for instance, step edges suppress the formation of buckled dimer domains, 6) A defects 7) serve as growth nuclei, and kink sites induce buckling. 8) What is more important is that there exist two types of c(4 × 2) domains which are antiphased with respect to each other.…”

Section: Introductionmentioning

confidence: 99%

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Spontaneous Fluctuation between Symmetric and Buckled Dimer Domains of Si(100) at 80 K

Hata

Kimura

Sainoo

et al. 1999

Jpn. J. Appl. Phys.

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At 80 K, not all the dimers of Si(100) appear buckled in the scanning tunneling microscopy (STM) images but a certain number of the dimers are observed in a symmetric configuration. We report on observations of a two-dimensional spontaneous fluctuation of the symmetric⇔buckled dimer domains at some particular locations. We interpret the spontaneous fluctuation to be induced by the competition of several antiphased c(4 × 2) buckled domains to expand. The fluctuation of domains was interpreted by two mechanisms: a fast switching between buckled dimer domains; and symmetric dimers induced by migration of P defects.

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Section: Resultsmentioning

confidence: 98%

Section: Experiments and Resultsmentioning

confidence: 99%

Section: Experiments and Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Spontaneous Fluctuation between Symmetric and Buckled Dimer Domains of Si(100) at 80 K

Hata

Kimura

Sainoo

et al. 1999

Jpn. J. Appl. Phys.

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“…19,22,24 Although dimers 4 and 6 in Figs. 3 and 4 were not tilted, we assigned ϭϮ1 for these dimers in the Monte Carlo simulation.…”

Section: A Model and Methodsmentioning

confidence: 96%

Strain effects of missing dimer defects on dimer buckling of the Si(100) surface

Okamoto

Yokoyama²,

Uda³

et al. 2000

Phys. Rev. B

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We observed a characteristic dimer buckling pattern around a missing dimer defect on the Si͑100͒ surface near the critical temperature by low-temperature scanning tunneling microscopy ͑STM͒. We studied the dynamical properties of this surface by using a Monte Carlo technique on the model Ising system, regarding the buckled dimers as Ising spins. We determined the interaction parameters by the ab initio calculations within local-density approximation. The simulated STM images were in good agreement with the observed images in the whole temperature range.

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