Theory of surface photovoltage in a semiconductor with deep impurities

Choo, S.C.; Tan, Leng Seow; See, Hian Hian

doi:10.1016/0038-1101(93)90116-8

Cited by 3 publications

(2 citation statements)

References 5 publications

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“…Thus, under the FQL approximation, the SPV may be found by numerically solving algebraic equations, but not differential ones. Moreover, in some cases analytical expressions can be obtained [77,78].…”

Section: Super-bandgap Spvmentioning

confidence: 99%

“…The latter is merely an approximation, which assumes that all SCR generation/recombination processes may be effectively lumped in a single SRV-like parameter. This assumption has been examined by increasingly elaborate numerical simulations as well as analytical developments [77,78,80,89,441,532,535,536]. It was usually found to be satisfactory (i.e., introducing an error of several percent at most) for free surfaces as well as Schottky contacts, including cases with minority carrier trapping.…”

Section: Limitations and Solutionsmentioning

confidence: 99%

See 1 more Smart Citation

Surface photovoltage phenomena: theory, experiment, and applications

Kronik

Shapira

1999

Surface Science Reports

1,517

804

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Section: Super-bandgap Spvmentioning

confidence: 99%

Section: Limitations and Solutionsmentioning

confidence: 99%

Surface photovoltage phenomena: theory, experiment, and applications

Kronik

Shapira

1999

Surface Science Reports

1,517

804

View full text Add to dashboard Cite

On space-charge recombination in pn junctions

Choo

1996

Solid-State Electronics

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A generalized approach to surface photovoltage

Liu

Ruda

Chen

et al. 1996

Journal of Applied Physics

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A detailed majority and minority carrier current balance model for surface photovoltage (SPV) is presented. A rigorous treatment of carrier junction generation and surface recombination is shown to be essential. We show that under weak above band gap photoexcitation, standard constant open-circuit voltage and constant photon flux SPV measurements can both reveal the bulk minority carrier diffusion length, provided the initial band bending Vbi is sufficiently high. However, when Vbi is small, approximate SPV expressions are inapplicable and both standard SPV manifestations will then yield incorrect diffusion length values. We also show that for cases of low surface recombination velocity, the SPV technique can be used to measure the width of the space charge region and Vbi; however, when the surface recombination velocity is large, this approach cannot be used as majority carrier backdiffusion can play a dominant role under high photon energy excitation conditions.

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Theory of surface photovoltage in a semiconductor with deep impurities

Cited by 3 publications

References 5 publications

Surface photovoltage phenomena: theory, experiment, and applications

Surface photovoltage phenomena: theory, experiment, and applications

On space-charge recombination in pn junctions

A generalized approach to surface photovoltage

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