Theory of silicon inversion-layer impurity states derived from constant-energy ellipsoids oriented parallel to the interface

Abstract

A theoretical investigation has been made of electronic impurity states associated with the two lowest primed subbands of inversion layers in silicon metal-oxide-semiconductor field-effect transistors. The energies of the impurity states have been calculated as functions of the electric field in the inversion layer and the position of the impurity relative to the oxide-inversion-layer interface. The transition energies and oscillator strengths for electric dipole transitions between impurity states of different primed subbands have been calculated. Possibilities for experimental observation of these transitions are discussed.