Far-infrared and electrical transport studies of oxide-charge-induced localized states in a quasi-two-dimensional system

Glaser, E. R.; Bd, McCombe

doi:10.1103/physrevb.37.10769

Cited by 10 publications

(3 citation statements)

References 32 publications

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“…Such a dopant-mediated tunneling has been extensively investigated, 1,2 but most of the research has addressed the conduction in bulk semiconductors in which the energy of the impurity band relative to the Fermi energy is only a function of temperature and magnetic field if any. Putting a doped semiconductor into a transistor structure enables us to change the impurity-band energy by using the gate, which allows the hopping conduction to be modulated [3][4][5][6][7][8] and could provide fruitful information about the impurity band, such as the density of states (DOS). Studies on gate-controlled impurity conduction, however, have concentrated mainly on intentionally contaminated metal-oxide-semiconductor field-effect transistors (MOSFETs) or on the twodimensional (2D) impurity band of sodium segregated at around SiO 2 /Si interfaces.…”

Section: Introductionmentioning

confidence: 99%

“…Studies on gate-controlled impurity conduction, however, have concentrated mainly on intentionally contaminated metal-oxide-semiconductor field-effect transistors (MOSFETs) or on the twodimensional (2D) impurity band of sodium segregated at around SiO 2 /Si interfaces. [3][4][5][6] Very few reports have addressed ordinary bulk or three-dimensional (3D) impurity bands of, for example, phosphorus in silicon (Si:P), which is an important dopant in Si technology.…”

Section: Introductionmentioning

confidence: 99%

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Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and295K

et al. 2006

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We investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor fieldeffect transistors at temperatures between 10 and 295 K. We focus on transistors with phosphorus donor concentrations higher than those previously studied, where we expect conduction to rely on donor electrons rather than conduction-band electrons. In a range of doping concentration between around 2.1 and 8.7 x 10 17 cm -3 , we find that a clear peak emerges in the conductance versus gate-voltage curves at low temperature. In addition, temperature dependence measurements reveal that the conductance obeys a variable-range-hopping law up to an unexpectedly high temperature of over 100 K. The symmetric dual-gate configuration of the silicon-on-insulator we use allows us to fully characterize the vertical-bias dependence of the conductance. Comparison to computer simulation of the phosphorus impurity band depth-profile reveals how the spatial variation of the impurity-band energy determines the hopping conduction in transistor structures. We conclude that the emergence of the conductance peak and the hightemperature variable-range hopping originate from the band bending and its change by the gate bias. Moreover, the peak structure is found to be strongly related to the density of states (DOS) of the phosphorus impurity band, suggesting the possibility of performing a novel spectroscopy for the DOS of phosphorus, the dopant of paramount importance in Si technology, through transport experiments.Besides the field of impurity conduction, investigating the control of the tunneling process in Si:P is important for a certain class of silicon-based quantum information processing 15,16 in which charge manipulation by tunneling via P donors is a critical issue. [17][18][19][20] Research on electron transport in Si:P has thus been recently reactivated. 21,22 This paper reports the characterization of conductance in P-doped buried-channel MOSFETs with doping concentrations higher than those used in previous studies. We find a distinct peak structure to emerge in the conductance vs. gate-voltage curves, and its origin is identified as being a reflection of the DOS of Si:P. In particular, by exploiting a dual-gate structure with front and back gates, we show that the spatial variation of the impurity band energy, which has not been addressed in detail, is decisively important for understanding hopping conduction by the 3D impurity band (like Si:P) in transistors. II. DEVICE FABRICATION, CONDUCTANCE MEASUREMENTS AND POTENTIAL- PROFILE SIMULATIONBuried-channel MOSFETs with n-type impurities in both the channel and source/drain regions were fabricated on (100) silicon-on-insulator (SOI) wafers. SOI had been considered an exotic material in the past, but is now recognized as an important one both for advanced Si devices and for a basic understanding of transport 23 in Si owing to its useful dual (front and back) gates, each of which can work equivalently.The type of SOI used was "SIMOX" (separation-by-implanted oxygen), 24 which was made from b...

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and295K

et al. 2006

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“…[9][10][11][12][13][14][15][16][17][18] Recently, this research field has been reactivated, mostly with the final goal of charge and/or spin control using individual dopants in MOS-FET channels. [19][20][21][22][23][24][25][26][27][28][29][30] However, the research has concentrated on shallow dopants, such as phosphorus and boron.…”

Section: Introductionmentioning

confidence: 99%

Carrier transport in indium-doped p-channel silicon-on-insulator transistors between 30 and 285 K

Khalafalla¹,

Ono²,

Noborisaka³

et al. 2011

Journal of Applied Physics

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Articles you may be interested inMobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxidesemiconductor field-effect transistors Appl. Phys. Lett. 101, 213502 (2012); 10.1063/1.4767353 Two-dimensional quantum mechanical modeling of silicide-silicon contact resistance for nanoscale silicon-oninsulator metal-oxide-semiconductor field effect transistor Mobility comparison between front and back channels in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors by the front-gate split capacitance-voltage method Appl. Phys. Lett. 89, 032104 (2006); 10.1063/1.2222255Origin of the front-back-gate coupling in partially depleted and fully depleted silicon-on-insulator metal-oxidesemiconductor field-effect transistors with accumulated back gate Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal-oxide-semiconductor field-effect transistors Low-temperature carrier transport is investigated for indium-doped p-channel transistors and compared with that for boron-doped ones. It is shown that, with a doping concentration of 3 Â 10 17 cm À3 , while hopping conduction via acceptor sites predominates in boron-doped transistors, indium-doped ones exhibit strong carrier localization at 30 K. For temperatures between 100 and 285 K, the transport in indium-doped transistors is dominated by thermally activated valence-band conduction, and its activation energy coincides with the indium ionization energy.

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Magnetic freeze-out of sub-accumulation conductance in InAs: 2D impurity-band behaviour?

Nealon

Doezema

1990

Solid State Communications

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Far-infrared and electrical transport studies of oxide-charge-induced localized states in a quasi-two-dimensional system

Cited by 10 publications

References 32 publications

Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and295K

Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and295K

Carrier transport in indium-doped p-channel silicon-on-insulator transistors between 30 and 285 K

Magnetic freeze-out of sub-accumulation conductance in InAs: 2D impurity-band behaviour?

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