Carrier transport in indium-doped p-channel silicon-on-insulator transistors between 30 and 285 K

Abstract

Articles you may be interested inMobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxidesemiconductor field-effect transistors Appl. Phys. Lett. 101, 213502 (2012); 10.1063/1.4767353 Two-dimensional quantum mechanical modeling of silicide-silicon contact resistance for nanoscale silicon-oninsulator metal-oxide-semiconductor field effect transistor Mobility comparison between front and back channels in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors by the front-gate split capacitance-voltage method Appl. Phys. Lett. 89, 032104 (2006); 10.1063/1.2222255Origin of the front-back-gate coupling in partially depleted and fully depleted silicon-on-insulator metal-oxidesemiconductor field-effect transistors with accumulated back gate Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal-oxide-semiconductor field-effect transistors Low-temperature carrier transport is investigated for indium-doped p-channel transistors and compared with that for boron-doped ones. It is shown that, with a doping concentration of 3 Â 10 17 cm À3 , while hopping conduction via acceptor sites predominates in boron-doped transistors, indium-doped ones exhibit strong carrier localization at 30 K. For temperatures between 100 and 285 K, the transport in indium-doped transistors is dominated by thermally activated valence-band conduction, and its activation energy coincides with the indium ionization energy.

Single donor electronics and quantum functionalities with advanced CMOS technology

“…This electrostatic detection is comple mentary with a conductance measurement through the device, which they performed to estimate the 'horizontal' position by observing shifts in threshold voltage [38,39]. The same tech nique of 2D mapping of the conductance versus front and back gates has been used by the same group to compare the properties of Pdoped channels, with Indium and Boron [40]. The evolution of the I d (V g ) characteristics at 300 K with the backgate voltage is shown in figure 12 k T e B ( ) which yields 60 mV/decade for operation at 300 K. Figure 12(c) shows the variation of the linear conductance at…”

Observation of Photovoltaic Effect and Single-photon Detection in Nanowire Silicon pn-junction

“…In addition to the quantum size effect, which is commonly considered as the origin behind nanoscale phenomena [1], random dopant distribution has been reported as another source behind the changing in device performance [2][3][4]. More importantly, it has been reported that individual donor [5][6] and acceptor [7][8] may mediate carrier transport. This has opened an opportunity to utilize individual dopant as an active part for device functionalities.…”