Theory of radiation processes in decomposed solid solutions

Trushin, Yu. V.

doi:10.1016/0022-3115(91)90514-8

Cited by 12 publications

(19 citation statements)

References 11 publications

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“…A similar approach is also used in several previous reports. [19][20][21]23,24 The detailed description of each temperature range is presented below.…”

Section: Calculation Results and Dicussionmentioning

confidence: 99%

“…Actually, the system is described by a set of differential kinetic equations for the concentration variables C j corresponding to each defect type j. Although this approach can be considered as a standard and can be found elsewhere, 19 the solution of our set of equations is not trivial since the accounting of defect interactions leads to nonlinear equations. Depending on the defect type and various interactions, each equation can also include corresponding specific physical parameters, such as the diffusion coefficient D j , migration energy ε m j , dissociation energy ε b j , and so on.…”

Section: Model a General Approachmentioning

confidence: 99%

“…The volume of the nanocavity and its radius increases due to adsorption of a vacancy-argon complex and decreases due to desorption of vAr complex. The adsorption rate of the vacancy-argon complexes is determined 19 via the diffusion coefficient D vAr , whereas the desorption rate of the vacancy-argon complexes is estimated as a product of the dissociation coefficientχ V and the number of sites within a cavity, from which a vacancy and argon may leave the cavity. The accounting of these two rates together leads to the following expression for the variation rate of the cavity radius:…”

Section: B Model Assumptionsmentioning

confidence: 99%

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Temperature-induced evolution of subsurface nanocavities in argon-implanted copper

et al. 2011

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The evolution of argon-filled nanocavities in a copper crystal under annealing is studied experimentally and theoretically. The subsurface argon-filled nanocavities are formed after a short annealing at a temperature ∼1000 K by coalescence of subsurface defects initially created by argon implantation. The further prolonged annealing at a temperature above 1075 K leads to decomposition of the nanocavities and diffusion of implanted argon out of the sample. According to a simple analysis, the mechanism of the nanocavity formation is governed not only by the migration of simplest defects, such as vacancies and argon and copper interstitials, but also to a large extent, by diffusion and interaction of the complexes of these simplest defects. The experimental studies with x-ray photoelectron spectroscopy and scanning tunneling microscopy and spectroscopy provide valuable data sets of the density of nanocavities and their size and depth distribution. Based on the experimental results, a theoretical model is developed. The calculation with the model proves that the growth of the nanocavities is mainly determined by the temperature-induced migration of vacancy-argon complexes. By combining the experimental data with the simulation results, the migration energy of these kinds of complexes is estimated ∼2.55-2.75 eV. Moreover, the calculation with our model provides the estimate of the dissociation energy of a multiple complex, consisting of two vacancies and two argon atoms, as 1.10-1.18 eV. These parameters, reported in this article, play a key role in the description of the kinetics of the growth and decomposition of nanocavities.

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“…A similar approach is also used in several previous reports. [19][20][21]23,24 The detailed description of each temperature range is presented below.…”

Section: Calculation Results and Dicussionmentioning

confidence: 99%

Section: Model a General Approachmentioning

confidence: 99%

Section: B Model Assumptionsmentioning

confidence: 99%

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Temperature-induced evolution of subsurface nanocavities in argon-implanted copper

et al. 2011

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“…Целью настоящей работы является разработка кинетической модели зародышеобразования и роста отдельных кристаллов белка при кристал-лизации в капиллярах методом контрдиффузии. Будем рассматривать рост кристаллов белка исходя из кинетического подхода его форми-рования [14][15][16][17][18]. Для этого необходимо записать самосогласованную систему кинетических уравнений изменения концентрации растворен-ных молекул белка, вероятности появления кристаллов и радиусов кристаллов.…”

Section: поступило в редакцию 29 сентября 2017 гunclassified

Кинетическая Модель Формирования Кристаллов Белка В Капиллярах Методом Контрдиффузии

Соколовский¹,

Лубов²,

Беседина³

et al. 2018

Письма В Журнал Технической Физики

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“…It is energetically favorable for new vacancy to be formed near a already existing one (see, for example [6]), i.e. to create di-, three-vacancy clusters and so on, in other words new vacancies are formed in already existing voids.…”

mentioning

confidence: 99%

Simulation of quality of SiC/Si interface during MBE deposition of C on Si

Kulikov

Schmidt

Korolev

et al. 2006

Mat.-wiss. u. Werkstofftech.

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Simulation of quality of SiC/Si interface during MBE deposition of C on Si ABSTRACTIn present paper we simulate the processes accompanying the SiC/Si epitaxial growth.The model suggested describes the formation and growth of voids at SiC/Si interface.These voids are sources of Si atoms for SiC growth. According to the model the size distribution function was obtained being in good agreement with experimental data. The influence of surfactants on the nucleation and growth of SiC nanoislands on Si was studied as well.

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Theory of radiation processes in decomposed solid solutions

Cited by 12 publications

References 11 publications

Temperature-induced evolution of subsurface nanocavities in argon-implanted copper

Temperature-induced evolution of subsurface nanocavities in argon-implanted copper

Кинетическая Модель Формирования Кристаллов Белка В Капиллярах Методом Контрдиффузии

Simulation of quality of SiC/Si interface during MBE deposition of C on Si

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