Simulation of quality of SiC/Si interface during MBE deposition of C on Si

Kulikov, D. V.; Schmidt, A. A.; Korolev, S. A.; Morales, F. M.; Stauden, Thomas; Trushin, Yu. V.; Pezoldt, Jörg

doi:10.1002/mawe.200600080

Cited by 8 publications

(6 citation statements)

References 11 publications

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“…In a recently published work, kinetic Monte Carlo simulations were used to study the influence of attractive and repulsive acting impurities on the nucleation of SiC on Si surfaces. [55] In this study, attractive impurities are impurities that are able to form carbides, whereas repulsive impurities are impurities that cannot form bonds with carbon atoms. For both types of impurities located on the surface, an increase of the nucleation density, i.e.…”

Section: Resultsmentioning

confidence: 99%

Surface morphology of Ge‐modified 3C‐SiC/Si films

Nader

Kazan

Moussaed

et al. 2008

Surface & Interface Analysis

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The influence of Ge deposition prior to carbon interaction with 3• off-axis Si(111) substrates on the structural and morphological properties of the formed silicon carbide (SiC) layer is studied. In situ reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) revealed the formation of the cubic silicon carbide (3C-SiC) modification. In situ spectroscopic ellipsometry measurements revealed a decreasing 3C-SiC thickness with increasing Ge predeposition. Atomic force microscopy (AFM) studies revealed that the surface overlayer morphology is mainly formed by periodic step arrangements whose relevant geometric parameters, i.e. lateral separation, height and terrace width, depend on the Ge content. Besides the changes of the step morphology, the surface roughness and the grain size and the strain of the formed 3C-SiC decreases with increasing germanium precoverage.

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Section: Resultsmentioning

confidence: 99%

Surface morphology of Ge‐modified 3C‐SiC/Si films

Nader

Kazan

Moussaed

et al. 2008

Surface & Interface Analysis

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“…140 A simple physical model is proposed to describe the processes of nucleation and growth of the void system. 125 We use in our investigations the experimental results 140 of TEM observation of such a void system. It might be possible to extract size distribution function of voids from TEM image and compare it directly with simulation results.…”

Section: Void Formationmentioning

confidence: 99%

“…125 Simulations of SiC cluster growth with and without predeposited impurities were performed. Two different cases of impurities were investigated, namely mobile and immobile impurities.…”

Section: Nucleation Modification By Impuritiesmentioning

confidence: 99%

Multi-Scale Simulation of Nucleation and Growth of Nanoscale SiC on Si

Pezoldt¹,

Kulikov²,

Kharlamov³

et al. 2012

Jnl of Comp & Theo Nano

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The main obstacle of implementing numerical simulations for the prediction of nucleation and epitaxial growth is the variety of physical processes with a considerable difference in time and spatial scales. During the growth of nanostructures and epitaxy deposition of atoms, surface and bulk diffusion, nucleation of two-dimensional and three-dimensional clusters, transitions from two dimensional to three dimensional growth, stress relaxation occur. Thus, it is challenging to describe all of them in the framework of a single physical model. In the present work a multi-scale simulation of the epitaxial growth of silicon carbide nanostructures on silicon using three numerical methods, namely Molecular Dynamics, kinetic Monte Carlo, and the Rate Equations was implemented. Molecular Dynamics was used for the estimation of kinetic parameters of atoms and stress fields at the surface, which are input parameters for the other simulation methods. Kinetic Monte Carlo simulations allowed investigating basic nucleation processes and the transition from two dimensional nucleation to three dimensional cluster growth as well as the ordering of nanoclusters. Furthermore the influence of impurities on the nucleation of nanoscale SiC was studied. The energy barriers values obtained in Molecular Dynamics and the physical model used in the rate equation simulations was validated by Kinetic Monte Carlo. The Rate Equation simulation allowed studying the growth process at larger time scales taking into account the surface stress fields. As a result, a full time scale description spanning over a large substrate area of the morphological and structural surface evolution during SiC formation on Si was developed.

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“…The reduction of grain size can be explained if recently published kinetic Monte Carlo simulations are taken into account [20]. In this theoretical investigation the influence of attractive and repulsive impurities on the SiC nucleation on Si surfaces was studied.…”

Section: Contributedmentioning

confidence: 99%

Designing the Si(100) conversion into SiC(100) by Ge

Nader

Niebelschütz

Kulikov³

et al. 2010

Phys. Status Solidi (c)

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The deposition of Germanium (Ge) prior to the conversion of Si(100) into 3C‐SiC(100) results in changes of the structure and surface morphology of the formed silicon carbide layer. First of all it reduces the thickness of the 3C‐SiC layer grown during the conversion process and therefore the probability of voids formation. Secondly, it increases the nucleation density of the formed 3C‐SiC nuclei and therefore, decreases the grain size at Ge coverages below two monolayers. These affect the roughness of the SiC surface positively by modifying the width of the SiC‐Si interface. If the Ge coverages exceed two monolayers the structural and morphological properties begin to degrade. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Simulation of quality of SiC/Si interface during MBE deposition of C on Si

Cited by 8 publications

References 11 publications

Surface morphology of Ge‐modified 3C‐SiC/Si films

Surface morphology of Ge‐modified 3C‐SiC/Si films

Multi-Scale Simulation of Nucleation and Growth of Nanoscale SiC on Si

Designing the Si(100) conversion into SiC(100) by Ge

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