Theory of Optical Spin Orientation of Electrons and Nuclei in Semiconductors

Dyakonov, Michel; Perel, V. I.

doi:10.1016/b978-0-444-86741-4.50007-x

Cited by 145 publications

(159 citation statements)

References 25 publications

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“…Measurements of the Hanle curve in GaAlAs were used by Garbuzov et al (1971) to separately determine both and s at various temperatures. The theory of the Hanle effect in n-doped semiconductors was developed by D'yakonov and Perel' (1976), who showed the nonLorentzian decay of the luminescence for the regimes of both low ( J / s ӷ1) and high ( J / s Ӷ1) intensity of the exciting light. At high fields P n (B)ϰ1/B 1/2 , consistent with the experiments of Vekua et al (1976) in Ga 0.8 Al 0.2 As, showing a Hanle curve different from the usual P n (B)ϰ1/B 2 Lorentzian behavior (D'yakonov and Perel', 1984a).…”

Section: B Optical Spin Orientationmentioning

confidence: 99%

Spintronics: Fundamentals and applications

2004

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Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics. CONTENTS

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Section: B Optical Spin Orientationmentioning

confidence: 99%

Spintronics: Fundamentals and applications

2004

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“…However, these phenomena behave qualitatively different in p-and n-type semiconductors (D'yakonov and Perel', 1971a). In p-type semiconductors, only the spins of the non-equilibrium electrons become oriented.…”

Section: Optical Orientation Of Electron Spinsmentioning

confidence: 99%

“…Optical orientation in bulk systems was reviewed by Dyakonov and Perel (1984). Early works on 2D systems were published by Weisbuch et al (1981) and Masselink et al (1984) who reported on polarization-resolved transmission and PL experiments on GaAs/AlGaAs quantum wells (QWs) under cw excitation.…”

Section: Optical Orientation Of Electron Spinsmentioning

confidence: 99%

“…Figure 1: Selection rules and relative transition rates T for optical transitions between valence band (VB) states having an effective spin S = 3/2 and conduction band (CB) states with S = 1/2 (Dyakonov and Perel, 1984)). In bulk semiconductors the HH states (S z = ±3/2) are degenerate with the LH states (S z = ±1/2) whereas in quasi-2D systems the LH states (dashed bold lines) are lower in energy than the HH states.…”

Section: Optical Orientation Of Electron Spinsmentioning

confidence: 99%

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Spin‐dependent Transport of Carriers in Semiconductors

Winkler

2007

Handbook of Magnetism and Advanced Magnetic Materials

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This article reviews spin-dependent transport of carriers in homogenous threedimensional and two-dimensional semiconductors. We begin with a discussion of optical orientation of electron spins, which allows both the creation and detection of spin-polarized carriers in semiconductors. Then we review non-equilibrium spin flow including spin drift and diffusion caused by electric fields and concentration gradients. A controlled spin precession is possible both in external magnetic fields and in effective magnetic fields due to a broken inversion symmetry. Although the Coulomb interaction does not couple to the spin degree of freedom, it affects the spin-dependent transport via the spin Coulomb drag. In gyrotropic media, the optical creation of spin-oriented electrons gives rise to spin photocurrents, which reverse their direction when the radiation helicity is changed from left-handed to right-handed. The reverse process is possible, too, i.e., an electric current in a gyrotropic medium gives rise to a spin polarization in the bulk of the sample.

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“…However, due to the spin orbit interaction, a strong coupling exists between the hole's angular momentum and its quasimomentum (k ជ ), resulting in a loss of the hole spin orientation on the time scale of the momentum relaxation time ( p ϳ10 Ϫ13 s͒; in the conduction band this strong coupling is absent, causing the electron spin lifetime to be many orders of magnitude larger. 28 In p-type GaAs, the bands are generally bending downward from the bulk toward the surface, which drives the optically oriented electrons toward the surface. 29 In the photovoltaic mode of operation, this flow of electrons ͑the minority carrier current J p ) is balanced by the hole current that flows through the Schottky barrier ͑the majority carrier current J s ); the latter is given by thermally assisted transport over the electrostatic barrier and subsequent surface recombination.…”

Section: B Semiconductor Surface Spin Splittingmentioning

confidence: 99%

Spin-polarized tunneling with GaAs tips in scanning tunneling microscopy

1996

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We describe a model as well as experiments on spin-polarized tunneling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide ͑GaAs͒, where the latter is optically excited with circularly polarized light in order to generate spin-polarized carriers. We present a transport model that takes account of carrier capture in the semiconductor surface states, and describes the semiconductor surface in terms of a spin-dependent energy distribution function. The so-called surface spin splitting can be calculated from the balance of the polarized electron and hole flow in the semiconductor subsurface region, the polarized tunneling current across the tunnel barrier between the magnetic material and the semiconductor surface, and the spin relaxation at the semiconductor surface. We present experimental data obtained in a scanning tunneling microscope with a GaAs tip and a Pt/Co multilayer sample under ambient conditions. A helicity asymmetry of tunnel current ͑i.e., a circular-polarization-dependent tunnel current͒ was found with a magnitude of 4 pA , which was verified not to be due to variations of the optical power. According to our model and estimations, this observation can be explained by spin-polarized tunneling, with a lower limit to the semiconductor surface spin splitting and spin lifetime of 4 mV and 0.4 ns, respectively.

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Theory of Optical Spin Orientation of Electrons and Nuclei in Semiconductors

Cited by 145 publications

References 25 publications

Spintronics: Fundamentals and applications

Spintronics: Fundamentals and applications

Spin‐dependent Transport of Carriers in Semiconductors

Spin-polarized tunneling with GaAs tips in scanning tunneling microscopy

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