Theory of Mn–H co-doping for GaAs and related magnetic semiconductors

Goss, Jonathan P.; Briddon, P.R.; Wardle, M. G.

doi:10.1016/j.physb.2005.12.165

Cited by 5 publications

(1 citation statement)

References 30 publications

(32 reference statements)

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“…Hydrogenated Ga 1−x Mn x As exhibits the same mode positions as hydrogenated Mg-and Zn-doped GaAs [16,18]. Two independent groups [30,31,32,33] indeed predict a bond-centered configuration for Ga 1−x Mn x As: H to be the energetically favored geometry where the H atom is slightly relaxed away from the Mn-As bond. However, the missing influence of the mode position on the specific acceptor in the case of Mg-and Zn-doped GaAs led Pajot to the alternative suggestion that hydrogen is backbonded to one of the As neighbors in acceptor-hydrogen complexes [34].…”

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confidence: 86%

Suppression of hole-mediated ferromagnetism in GaMnP by hydrogen

Bihler,

Kraus,

Brandt

et al. 2007

Preprint

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We report the successful passivation of the Mn acceptors in Ga 1−x Mn x P upon exposure to a remote dc hydrogen plasma. The as-grown films are non-metallic and ferromagnetic with a Curie temperature of T C = 55 K. After hydrogenation the sample resistivity increases by approximately three orders of magnitude at room temperature and six orders of magnitude at 25 K. Furthermore, the hydrogenated samples are paramagnetic, which is evidenced by a magnetization curve at 5 K that is best described by a Brillouin function with g = 2 and J = 5/2 expected for Mn atoms in the 3d 5 configuration. These observations unambiguously proof that the ferromagnetism is carrier-mediated also in Ga 1−x Mn x P.

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confidence: 86%

Suppression of hole-mediated ferromagnetism in GaMnP by hydrogen

Bihler,

Kraus,

Brandt

et al. 2007

Preprint

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A Critical Review of Current Studies on Hydrogen Defect in Diluted Magnetic Semiconductors and Relative Ferroelectric Materials for Smart Electronic Applications

Thoan

Khoa

Dũng

2022

J Supercond Nov Magn

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Suppression of hole-mediated ferromagnetism in Ga1−xMnxP by hydrogen

Bihler

Kraus

Brandt

et al. 2008

Journal of Applied Physics

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We report the passivation of the Mn acceptors in Ga1−xMnxP upon exposure to a hydrogen plasma. The as-grown films are nonmetallic and ferromagnetic with a Curie temperature of TC=55 K. After hydrogenation the sample resistivity increases by approximately three orders of magnitude at room temperature and six orders of magnitude at 25 K. Furthermore, the hydrogenated samples are paramagnetic, which is evidenced by a magnetization curve at 5 K that is best described by a Brillouin function with g=2 and J=5/2 expected for Mn atoms in the 3d5 configuration. Upon annealing, partial depassivation and a recovery of ferromagnetism are observed. These observations unambiguously demonstrate that the ferromagnetism in Ga1−xMnxP is carrier-mediated similar to Ga1−xMnxAs.

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Theory of Mn–H co-doping for GaAs and related magnetic semiconductors

Cited by 5 publications

References 30 publications

Suppression of hole-mediated ferromagnetism in GaMnP by hydrogen

Suppression of hole-mediated ferromagnetism in GaMnP by hydrogen

A Critical Review of Current Studies on Hydrogen Defect in Diluted Magnetic Semiconductors and Relative Ferroelectric Materials for Smart Electronic Applications

Suppression of hole-mediated ferromagnetism in Ga1−xMnxP by hydrogen

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