No abstract

We report the substrate-modified magnetic properties of the CuAu type-I (L10) structure of MnxGa (1.2<x<1.5) films. The magnetic properties of the MnGa films differed greatly due to the influence of the substrate. The MnGa film is a hard ferrimagnet when grown on GaSb (111), becomes a soft ferrimagnet when grown on Al2O3 (0001), and exhibits an absence of a net magnetic moment when stabilized on a GaSb (100) substrate. This difference was attributed to the substrate, which forces MnGa film to be two-dimensionally stabilized in a different orientation and thus leads to the modified crystal symmetry and a change in the magnetic property. The results may be helpful for forming a comprehensive understanding of MnGa and for finding new applications in spintronic devices.

New (1-x)Bi 0.5 na 0.5 tio 3 + xcafeo 3-δ solid solution compounds were fabricated using a sol-gel method. the cafeo 3-δ materials were mixed into host Bi 0.5 na 0.5 tio 3 materials to form a solid solution that exhibited similar crystal symmetry to those of Bi 0.5 na 0.5 tio 3 phases. The random distribution of Ca and fe cations in the Bi 0.5 na 0.5 tio 3 crystals resulted in a distorted structure. The optical band gaps decreased from 3.11 eV for the pure Bi 0.5 na 0.5 tio 3 samples to 2.34 eV for the 9 mol% CaFeO 3-δ -modified Bi 0.5 na 0.5 tio 3 samples. Moreover, the Bi 0.5 na 0.5 tio 3 samples exhibited weak photoluminescence because of the intrinsic defects and suppressed photoluminescence with increasing cafeo 3-δ concentration. Experimental and theoretical studies via density functional theory calculations showed that pure Bi 0.5 na 0.5 tio 3 exhibited intrinsic ferromagnetism, which is associated with the possible presence of Bi, Na, and Ti vacancies and Ti 3+ -defect states. Further studies showed that such an induced magnetism by intrinsic defects can also be enhanced effectively with CaFeO 3-δ addition. This study provides a basis for understanding the role of secondary phase as a solid solution in Bi 0.5 na 0.5 tio 3 to facilitate the development of lead-free ferroelectric materials.The integration of room-temperature ferromagnetic behavior in lead-free ferroelectric materials is a new research trend for the development of green functional materials in smart electronic devices 1,2 . PbTiO 3 -based compounds are one of the most commonly used ferroelectric materials in electronic devices 3 . Therefore, ferroelectric PbTiO 3 -based materials with improved magnetic properties have the potential for the fabrication of next-generation electronic devices.First, the self-organized ferromagnetism of pure ferroelectric PbTiO 3 materials was investigated. The experimental results showed that the weak ferromagnetism in undoped PbTiO 3 nanocrystalline at room temperature resulted from intrinsic defects in events such as O and Ti vacancies 4 . PbTiO 3 thin films also exhibited room-temperature ferromagnetism because of defects in the crystal quality of the film during growth 5 . Shimada et al. predicted that both O and Ti vacancies induce ferromagnetism but through different mechanisms. The ferromagnetism driven by O vacancies originated from the spin-polarized e g state of the nearest Ti atom, whereas that directed by Ti vacancies was attributed to the half-metallic p x state of the nearest O atom 6 . In addition, the ferroelectric property of PbTiO 3 materials at room temperature could be attributed to O vacancies formed on the surfaces, such as vacancies induced ferromagnetism due to local non-stoichiometry and orbital symmetry breaking 7 . Xu et al. conducted first-principle calculations and reported that the O vacancies that formed at the domain wall led to magnetism with a localized spin moment around the vacancies 8 . Second, the conversion of transition metals to ferroelectric PbTiO 3 materials was studied...

From the reported rate constants19'0 for N20-saturated solutions containing 5 mM pyridine and 0-4 mM IrCI62", the total OH yield expected would be only 5.5 Instead of 6.0 because of the small loss of eaq" to IrCI62".

No abstract

No abstract

No abstract

No abstract